MBR1090 [TSC]

10.0 AMPS. Schottky Barrier Rectifiers; 10.0安培。肖特基势垒整流器
MBR1090
型号: MBR1090
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

10.0 AMPS. Schottky Barrier Rectifiers
10.0安培。肖特基势垒整流器

二极管 瞄准线 功效 局域网
文件: 总2页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR1035 THRU MBR10200  
10.0 AMPS. Schottky Barrier Rectifiers  
Voltage Range  
35 to 200 Volts  
Current  
10.0 Amperes  
TO-220A  
Features  
.185(4.70)  
.175(4.44)  
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
.055(1.40)  
.045(1.14)  
.412(10.5)  
MAX  
DIA  
.154(3.91)  
.148(3.74)  
.113(2.87)  
.103(2.62)  
.27(6.86)  
.23(5.84)  
.594(15.1)  
.587(14.9)  
PIN1  
2
.16(4.06)  
.14(3.56)  
.11(2.79)  
.10(2.54)  
.56(14.22)  
.53(13.46)  
.037(0.94)  
.027(0.68)  
Mechanical Data  
Cases: JEDEC TO-220A molded plastic body  
Terminals: Lead solderable per MIL-STD-750, Method  
2026  
.025(0.64)  
.014(0.35)  
.205(5.20)  
.195(4.95)  
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR MBR MBR MBR MBR MBR MBR  
1035 1045 1050 1060 1090 10100 10200  
Symbol  
Type Number  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
35  
24  
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
200  
140  
200  
VRRM  
VRMS  
VDC  
70  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
See Fig. 1  
A
A
A
10  
I(AV)  
IFRM  
IFSM  
Peak Repetitive Forward Current (Square Wave,  
20KHz) at Tc=135oC  
20.0  
150  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
Peak Repetitive Reverse Surge Current (Note 1)  
A
1.0  
0.5  
IRRM  
dV/dt  
Voltage Rate of Change (Rated VR)  
V/uS  
10,000  
Maximum Instantaneous Forward Voltage at  
(Note 2)  
IF=10A, Tc=25OC  
IF=10A, Tc=125OC  
IF=20A, Tc=25OC  
IF=20A, Tc=125OC  
0.70  
0.57  
0.84  
0.72  
0.80  
0.70  
0.95  
0.85  
0.85  
0.71  
1.05  
-
-
VF  
V
-
-
Maximum Instantaneous Reverse Current  
@ Tc =25at Rated DC Blocking Voltage (Note 2)  
@ Tc=125℃  
0.1  
15.0  
0.1  
6.0  
0.009  
10  
mA  
mA  
IR  
Typical Junction Capacitance (Note 3)  
350  
280  
200  
2.0  
pF  
/W  
Cj  
RθJC  
TJ  
Maximum Thermal Resistance, Junction to Case  
Operating Junction Temperature Range  
Storage Temperature Range  
3.5  
-65 to +150  
-65 to +175  
TSTG  
Notes: 1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.  
- 88 -  
RATINGS AND CHARACTERISTIC CURVES (MBR1035 THRU MBR10200)  
FIG.2- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG.1- FORWARD CURRENT DERATING CURVE  
175  
150  
12  
10  
RESISTIVE OR  
INDUCTIVE LOAD  
125  
100  
8
6
75  
50  
4
MBR1035-MBR1045  
MBR1050-MBR10200  
2
0
25  
0.1  
1
10  
100  
0
50  
CASE TEMPERATURE. (oC)  
100  
150  
NUMBER OF CYCLES AT 60Hz  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
FIG.3- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
50  
10  
40  
Tj=1250C  
10  
Tj=1250C  
Pulse Width=300  
1% Duty Cycle  
s
1
1
Tj=750C  
Tj=250C  
0.1  
0.1  
0.01  
Tj=250C  
MBR1035-MBR1045  
MBR1050-MBR1060  
MBR1090-MBR10100  
MBR10200  
MBR1035-MBR1060  
MBR1090-MBR1020  
0.001  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
1.2  
0.7 0.8 0.9 1.0 1.1  
0.6  
0
0.1 0.2 0.3 0.4 0.5  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FORWARD VOLTAGE. (V)  
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTIC  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
100  
4,000  
1,000  
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
10.0  
1
MBR1035-MBR1045  
MBR1050 & MBR1060  
MBR1090-MBR10200  
0.1  
100  
0.1  
1.0  
10  
REVERSE VOLTAGE. (V)  
100  
0.01  
0.1  
1
10  
100  
T, PULSE DURATION.( sec.)  
- 89 -  

相关型号:

MBR1090-1

Switching power supply
SMC

MBR1090-E3

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

MBR1090-E3/4W

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

MBR1090-M3/4W

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

MBR1090/45

Rectifier Diode, Schottky, 1 Element, 10A, 90V V(RRM),
VISHAY

MBR1090/45-E3

DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

MBR1090CA

10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
THINKISEMI

MBR1090CD

SCHOTTKY BARRIER RECTIFIERS
DYELEC

MBR1090CGD

SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS
DYELEC

MBR1090CKD

SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS
DYELEC

MBR1090CP

SCHOTTKY BARRIER RECTIFIERS
DYELEC

MBR1090CT

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
DIODES