MBR20H200CT [TSC]
20.0 AMPS. Schottky Barrier Rectifiers; 20.0安培。肖特基势垒整流器
| 型号： | MBR20H200CT |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20.0 AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20H100CT – MBR20H200CT
20.0 AMPS. Schottky Barrier Rectifiers
Pb
RoHS
COMPLIANCE
TO-220AB
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply – output rectification, power
management, instrumentation
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
MBR
MBR
Type Number
Units
Symbol
20H100CT 20H150CT 20H200CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
100
70
100
150
105
150
200
140
200
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I(AV)
IFRM
IFSM
IRRM
20
20
at Tc=125OC
A
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
150
A
A
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25oC
IF=10A, TC=125oC
IF=20A, TC=25oC
IF=20A, TC=125oC
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
VF
V
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage
5
uA
mA
IR
@ Tc=125 oC
(Note 2)
2.0
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
oC/W
Maximum Typical Thermal Resistance (Note 3)
R
θJC
1.5
oC
Operating Junction Temperature Range
Storage Temperature Range
-65 to +175
-65 to +175
TJ
TSTG
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
Version: A07
RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT - MBR20H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
150
125
20
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
16
12
100
75
8
50
25
0
4
0
0
50
1
25
100
CASE TEMPERATURE. (oC)
10
100
75
150
125
175
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
5
1
40
10
Tj=1250C
Tj=1250C
Tj=250C
0.1
0.01
1
Tj=750C
0.1
0.001
0.0001
Tj=250C
Pulse Width=300
1% Duty Cycle
s
0.01
0
1.2
1.0 1.1
0.7 0.8
0
0.5 0.6
0.9
20
40
60
80
100
120
140
0.1
0.4
0.2 0.3
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
100
10.0
1
Tj=250C
f=1.0MHz
Vsig=50mVp-p
2,000
1,000
500
200
100
0.1
0.1
1.0
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
Version: A07
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