MBR7100 [TSC]
7.5 AMPS. Schottky Barrier Rectifiers; 7.5安培。肖特基势垒整流器
| 型号： | MBR7100 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 7.5 AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR735 THRU MBR7100
7.5 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
7.5 Amperes
TO-220A
Features
.185(4.70)
.175(4.44)
ꢀ
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
.055(1.40)
.045(1.14)
.412(10.5)
DIA
MAX
.154(3.91)
.148(3.74)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
.113(2.87)
.103(2.62)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
PIN1
2
ꢀ
ꢀ
.16(4.06)
.14(3.56)
High temperature soldering guaranteed:
.11(2.79)
.10(2.54)
260oC/10 seconds,0.25”(6.35mm)from case
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
Mechanical Data
ꢀ
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
.025(0.64)
.014(0.35)
.205(5.20)
.195(4.95)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol MBR MBR MBR MBR MBR MBR
Type Number
Units
735
745
750
760
790 7100
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
35
24
45
31
50
35
60
42
90
63
90
100
70
Maximum DC Blocking Voltage
35
45
50
60
100
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
7.5
15.0
150
A
A
A
A
Peak Repetitive Forward Current (Square Wave, 20KHz) at
IFRM
IFSM
IRRM
Tc=105oC
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A,Tc=25℃
–
0.75
0.65
–
0.92
0.82
–
IF=7.5A,Tc=125℃
IF=15A,Tc=25℃
IF=15A,Tc=125℃
0.57
0.84
0.72
V
VF
–
–
Maximum Instantaneous Reverse Current @ Tc =25℃
at Rated DC Blocking Voltage (Note 1) @ Tc=125℃
0.1
15.0
0.5
50
mA
mA
0.1
–
IR
Voltage Rate of Change (Rated VR)
Typical Junction Capactance
Dv/dt
Cj
10,000
280
V/uS
pF
360
200
Maximum Thermal Resistance, (Note 3)
RθJC
RθJA
5.0
15.0
℃/W
Operating Junction Temperature Range
Storage Temperature Range
℃
℃
TJ
-65 to +150
-65 to +175
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
- 108 -
RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7100)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
8
175
150
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
125
100
6
4
75
50
25
2
0
MBR735-MBR745
MBR750-MBR7100
0
50
CASE TEMPERATURE. (oC)
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
40
MBR735-MBR745
MBR750-MBR7100
Tj=1250C
10
10
Tj=1250C
Pulse Width=300
1% Duty Cycle
s
1
1
Tj=250C
Tj=750C
0.1
0.01
0.1
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7100
Tj=250C
0.001
0.01
0
20
40
60
80
100
120
140
0
0.1 0.2 0.3 0.4 0.5
0.7 0.8 0.9 1.0 1.1
0.6
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
4,000
1,000
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10
1
100
40
MBR735-MBR745
MBR750 & MBR760
MBR790-MBR7100
0.1
0.01
0.1
1.0
10
REVERSE VOLTAGE. (V)
100
0.1
1
10
100
T, PULSE DURATION. (sec)
- 109 -
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