MCR100-3-A1G [TSC]

Thyristors;
MCR100-3-A1G
型号: MCR100-3-A1G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Thyristors

文件: 总3页 (文件大小:210K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8  
Thyristors  
Small Signal Diode  
DO-92  
A
B
C
G
Features  
E
Epitaxial planar die construction  
Surface device type mounting  
Moisture sensitivity level 1  
F
Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
Pb free version and RoHS compliant  
Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Mechanical Data  
Case : TO-92 plastic package  
D
Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
Weight : 0.19gram (approximately)  
High temperature soldering guaranteed: 260°C/10s  
Unit (mm)  
Unit (inch)  
Ordering Information  
Dimensions  
Min Max Min  
4.50 4.70 0.177  
4.50 4.70 0.177  
Max  
0.185  
0.185  
Part No.  
A
B
Package  
TO-92  
Packing  
4k/ box  
MCR100-3 A1/A1G  
MCR100-4 A1/A1G  
MCR100-5 A1/A1G  
MCR100-6 A1/A1G  
MCR100-7 A1/A1G  
MCR100-8 A1/A1G  
C
D
E
F
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
4k/ box  
4k/ box  
4k/ box  
4k/ box  
4k/ box  
12.50  
0.492  
0.35 0.45 0.013  
3.50 3.70 0.137  
1.00 1.20 0.039  
0.29 0.39 0.011  
0.017  
0.145  
0.047  
0.015  
G
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
Units  
IT(RMS)  
0.8  
A
Forward Current RMS(All Conduction Angles)  
MCR100-3  
100  
200  
300  
400  
500  
600  
MCR100-4  
MCR100-5  
MCR100-6  
MCR100-7  
MCR100-8  
Peak Repetitive Forward and Reverse  
Blocking VoltageTJ=25TO 125℃,  
RGK=1K)  
VDRM and VRRM  
V
Peak Forward Surge CurrentTA=25℃  
ITSM  
10  
A
(1/2 CycleSine Wave60Hz)  
I2t  
PGM  
A2s  
W
W
A
0.415  
0.1  
0.01  
1
Circuit Fusing Considerationst= 8.3 ms)  
Forward Peak Gate Power TA=25℃,PW1 us)  
Forward Average Gate PowerTA=25)  
Forward Peak Gate CurrentTA=25℃,PW1 us)  
Reverse Peak Gate CurrentTA=25℃,PW1 us)  
PGF(AV)  
IGFM  
VGRM  
5
V
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Version:B12  
MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8  
Thyristors  
Small Signal Diode  
Electrical Characteristics Ta=25℃  
Type Number  
Symbol  
Min  
Max  
Units  
Peak Forward or Reverse Blocking Current  
at VAK= Rated VDRM or VRRM  
IDRM,IRRM  
-
10  
uA  
Peak Forward On-State Voltage  
at ITM=1A Peak, TA=25℃  
VTM  
IGT  
-
-
1.7  
V
Gate Trigger Current (Continous dc)  
at Anode Voltage = 7 Vdc.,RL=100  
200  
uA  
Gate Trigger Current (Continous dc)  
at Anode Voltage = 7 Vdc.,RL=100Ω  
at Anode Voltage = Rated VDRM,RL=100)  
VGT  
IH  
-
-
0.8  
5
V
Holding Current at Anode Voltage =7 Vdc,initiating current=20mA  
mA  
Rating and Characteristic Curves  
Version:B12  
MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8  
Thyristors  
Small Signal Diode  
Tape & Reel specification  
Version:B12  

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