P6SMB43ACA [TSC]

Surface Mount Transient Voltage Suppressor; 表面贴装瞬态电压抑制器
P6SMB43ACA
元器件型号: P6SMB43ACA
生产厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述和应用:

Surface Mount Transient Voltage Suppressor
表面贴装瞬态电压抑制器

PDF文件: 总4页 (文件大小:69K)
下载文档:  下载PDF数据表文档文件
型号参数:P6SMB43ACA参数
是否无铅 不含铅
是否Rohs认证 符合
生命周期Active
IHS 制造商FAGOR ELECTRONICA S COOP
零件包装代码DO-214AA
包装说明SMB, 2 PIN
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
HTS代码8541.10.00.50
风险等级5.64
其他特性EXCELLENT CLAMPING CAPABILITY
最大击穿电压47.3 V
最小击穿电压38.7 V
击穿电压标称值43 V
最大钳位电压61.9 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
参考标准AEC-Q101
最大重复峰值反向电压34.8 V
子类别Transient Suppressors
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
P6SMB SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
6.8 to 200 Volts
600 Watts Peak Power
Features
For surface mounted application in order to optimize board
space
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
250
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
600 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.093gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
Symbol
Value
Peak Power Dissipation at T
A
=25 C,
Tp=1ms(Note 1)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Operating and Storage Temperature Range
O
Units
Watts
Amps
Volts
O
P
PK
I
FSM
V
F
T
J
, T
STG
Minimum 600
100
3.5
-65 to + 150
C
Notes: 1
.
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25
O
C Per Fig. 2.
2. Mounted on 5.0mm
2
(.013 mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute
Maximum.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types P6SMB6.8 through Types P6SMB200A.
2. Electrical Characteristics Apply in Both Directions.
- 620 -
RATINGS AND CHARACTERISTIC CURVES (P6SMB SERIES)
PEAK PULSE POWER (P
PP
) or CURRENT (IPPM)
DERATING IN PERCENTAGE. %
FIG.1- PEAK PULSE POWER RATING CURVE
100
FIG.2- PULSE DERATING CURVE
100
P
PPM
, PEAK PULSE POWER, KW
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
O
T
J
= 25 C
75
50
1
25
0.1
0.1 s
1.0 s
10 s
100 s
1.0ms
10ms
0
0
25
50
75
100
125
O
150
175
200
tp, PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE. ( C)
FIG.3- PULSE WAVEFORM
150
IFSM, PEAK FORWARD SURGE CURRENT.
AMPERES
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
200
tr = 10 sec
PEAK PULSE CURRENT - %
100
Peak Value
I
PPM
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS
to 50% of I
PPM
100
8.3ms Single Half Sine Wave
JEDEC Method
50
Half Value - I
PPM
2
10/1000 sec. WAVEFORM
as DEFINED by R.E.A.
50
td
0
0
1.0
2.0
3.0
4.0
10
1
2
4
6
8
10
20
40
60
80
100
t, TIME, ms
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL REVERSE LEAKAGE CHARACTERASTICS
1000
FIG.6- TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
6000
I
D
, INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
MEASURED at
ZERO BIAS
100
C
J
,JUNCTION CAPACITANCE. (pF)
1000
10
1
MEASURED AT DEVICES
STAND-OFF
VOLTAGE, V
WM
Tj =25 C
f = 1.0MHz
Vsig = 50 mVp-p
O
0.1
100
MEASURED at
STAND-OFF
VOLTAGE, V
WM
0.01
T
J
= 25 C
10
0
100
200
300
400
500
1
10
100
200
O
0.001
V
(BR)
, BREAKDOWN VOLTAGE. VOLTS
V
(BR)
, BREAKDOWN VOLTAGE. VOLTS
- 621 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device
Device
Marking
Code
KDJ
KEJ
KFJ
KGJ
KHJ
KKJ
KLJ
KMJ
KNJ
KPJ
KQJ
KRJ
KSJ
KTJ
KUJ
KVJ
KWJ
KXJ
KYJ
KZJ
LDJ
LEJ
LFJ
LGJ
LHJ
LKJ
LLJ
LMJ
LNJ
LPJ
LQJ
LRJ
LSJ
LTJ
LUJ
LVJ
LWJ
LXJ
LYJ
LZJ
MDJ
MEJ
MFJ
MGJ
MHJ
MKJ
MLJ
MMJ
MNJ
MPJ
MQJ
MRJ
MSJ
MTJ
Breakdown Voltage Test
Stand-Off
Maximum
Maximum
Maximum
Maximum
Current Voltage Reverse Leakage Peak Pulse
Clamping
Temperature
V
BR
@I
T
V
WM
at V
WM
Current I
RSM
Voltage at I
PPM
Coefficient
(Volts) (Note 1)
O
D
(uA)
Min
Max
(mA)
(Volts)
I
(Note 2)(Amps)
V
C
(Volts)
of V
BR
(% / C)
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
58
60
53
55
50
52
45
47
42
43
38
40
36
37
33
34
28
29
26
28
23
25
21
22
19
20
18
19
16
16.8
14
15
13.0
13.8
12
12.6
11.1
11.6
10.0
10.6
9.2
9.7
8.5
8.9
7.8
8.1
7.0
7.4
6.4
6.8
5.8
6.1
5.3
5.5
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108.0
103.0
118.0
113.0
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
P6SMB6.8
P6SMB6.8A
P6SMB7.5
P6SMB7.5A
P6SMB8.2
P6SMB8.2A
P6SMB9.1
P6SMB9.1A
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
P6SMB12A
P6SMB13
P6SMB13A
P6SMB15
P6SMB15A
P6SMB16
P6SMB16A
P6SMB18
P6SMB18A
P6SMB20
P6SMB20A
P6SMB22
P6SMB22A
P6SMB24
P6SMB24A
P6SMB27
P6SMB27A
P6SMB30
P6SMB30A
P6SMB33
P6SMB33A
P6SMB36
P6SMB36A
P6SMB39
P6SMB39A
P6SMB43
P6SMB43A
P6SMB47
P6SMB47A
P6SMB51
P6SMB51A
P6SMB56
P6SMB56A
P6SMB62
P6SMB62A
P6SMB68
P6SMB68A
P6SMB75
P6SMB75A
P6SMB82
P6SMB82A
- 622 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device
Device
Marking
Code
MUJ
MVJ
MWJ
MXJ
MYJ
MZJ
NDJ
NEJ
NFJ
NGJ
NHJ
NKJ
NLJ
NMJ
NNJ
NPJ
NQJ
NRJ
NSJ
NTJ
NUJ
NVJ
Breakdown Voltage Test
V
BR
Current
(Volts) (Note 1)
@I
T
Min
Max
(mA)
Stand-Off
Voltage
V
WM
(Volts)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse
Clamping
at V
WM
Current I
RSM
Voltage at I
PPM
I
D
(uA)
(Note 2)(Amps)
V
C
(Volts)
Maximum
Temperature
Coefficient
O
of V
BR
(% / C)
P6SMB91
P6SMB91A
P6SMB100
P6SMB100A
P6SMB110
P6SMB110A
P6SMB120
P6SMB120A
P6SMB130
P6SMB130A
P6SMB150
P6SMB150A
P6SMB160
P6SMB160A
P6SMB170
P6SMB170A
P6SMB180
P6SMB180A
P6SMB200
P6SMB200A
P6SMB220
P6SMB220A
81.9
86.5
90.0
95.0
99.0
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
153.0
162.0
162.0
171.0
180.0
190.0
198.0
209.0
100.0
95.5
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
187.0
179.0
198.0
189.0
220.0
210.0
242.0
231.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
175.0
185.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
1.8
1.9
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
244.0
234.0
258.0
246.0
287.0
274.0
342.0
328.0
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
Notes:
1. V
BR
measured after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waverform per Figure 3 and derate per Figure 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or Ca suffix for types P6SMB6.8 through P6SMB200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
- 623 -
相关元器件产品Datasheet PDF文档

P6SMB43AHE3/52

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor
暂无信息
0 VISHAY

P6SMB43AT3

600 Watt Peak Power Zener Transient Voltage Suppressors
暂无信息
16 ONSEMI

P6SMB43AT3

600 Watt Peak Power Zener Transient Voltage Suppressors
暂无信息
28 ONSEMI

P6SMB43AT3G

600 Watt Peak Power Zener Transient Voltage Suppressors
暂无信息
32 ONSEMI

P6SMB43ATR13LEADFREE

Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon,
暂无信息
1 CENTRAL

P6SMB43C

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
暂无信息
21 PANJIT
    P6SMB43ACA
    描述和应用

    Surface Mount Transient Voltage Suppressor
    表面贴装瞬态电压抑制器

    总4页 (69K) TAIWAN SEMICONDUCTOR COMPANY, LTD
    TAIWAN SEMICONDUCTOR COMPANY, LTD
    第一页预览: