RB521S-30 [TSC]
200mW, Low VF SMD Schottky Barrier Diode; 200mW的低VF SMD肖特基势垒二极管
| 型号： | RB521S-30 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 200mW, Low VF SMD Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB521S-30
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
SOD-523F
B
C
A
Features
Low power loss, high current capability, low VF
Surface device type mounting
D
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
E
F
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Min Max
Mechanical Data
Case : SOD-523F small outline plastic package
Dimensions
Min
Max
A
B
C
D
E
F
0.70 0.90 0.028 0.035
1.50 1.70 0.059 0.067
0.25 0.40 0.010 0.016
1.10 1.30 0.043 0.051
0.60 0.70 0.024 0.028
0.10 0.14 0.004 0.006
Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 1.68±0.5 mg
Marking Code: C
Ordering Information
Pin Configuration
Part No. Packaging Code Package
Packing Marking
RB521S-30
RB521S-30
RK
SOD-523F 3K / 7" Reel
SOD-523F 3K / 7" Reel
C
C
RKG
Suggested PAD Layout
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
mW
V
Power Dissipation
PD
VRRM
VR
200
Repetitive Peak Reverse Voltage
Reverse Voltage
30
30
V
IO
200
mA
A
Mean Forward Current @ TL=100℃ (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction Temperature
IFSM
RθJA
TJ
1
500
°C/W
°C
125
Storage Temperature Range
TSTG
-55 to + 125
°C
Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Version :A11
RB521S-30
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Maximum Ratings
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Symbol
V(BR)
VF
Min
Max
-
Units
V
500uA
200mA
10V
30
-
Reverse Breakdown Voltage
Forward Voltage
IR=
IF=
0.50
30
V
IR
-
μA
Reverse Leakage Current
VR=
Carrier & Reel specification
TSC label
Dimension
(mm)
3.15 ±0.10
Item
Carrier width
Symbol
A
B
Top Cover Tape
Carrier length
3.94 ±0.05
1.35 ±0.10
1.75 ±0.10
178 ±1
Carrier depth
C
Sprocket hole
d
Carieer Tape
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
D
D1
D2
E
54.4 ±0.40
13.0 ±0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.22 ±0.05
8.10 ±0.20
12.3 ±0.20
Any Additional Label (If Required)
P0
P1
d
F
T
P0
P1
T
E
F
A
W
C
B
W
W1
Reel width
W1
D
D2
D1
User Direction of Feed
Version : A11
RB521S-30
200mW, Low VF SMD Schottky Barrier Diode
Small Signal Diode
Rating and Characteristic Curves
Version : A11
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