RS1J [TSC]

1.0 AMP. Surface Mount Fast Recovery Rectifiers; 1.0 AMP 。表面安装快恢复二极管
RS1J
型号: RS1J
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

1.0 AMP. Surface Mount Fast Recovery Rectifiers
1.0 AMP 。表面安装快恢复二极管

二极管 快恢复二极管 光电二极管
文件: 总2页 (文件大小:128K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RS1A - RS1M  
1.0 AMP. Surface Mount Fast Recovery Rectifiers  
SMA/DO-214AC  
Features  
For surface mounted application  
Glass passivated junction chip  
Built-in strain relief, ideal for automated  
placement  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
Fast switching for high efficiency  
High temperature soldering:  
260oC/ 10 seconds at terminals  
Mechanical Data  
Cases: Molded plastic  
Terminals: Pure tin plated, Lead free.  
Polarity: Indicated by cathode band  
Packing: 12mm tape per EIA STD  
RS-481  
Dimensions in inches and (millimeters)  
Weight: 0.064 gram  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol RS1A RS1B RS1D RS1G RS1J RS1K RS1M Units  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
See Fig. 1 @TL=90 oC  
I(AV)  
1.0  
A
A
V
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load  
(JEDEC method )  
IFSM  
30  
Maximum Instantaneous Forward Voltage  
@ 1.0A  
Maximum DC Reverse Current @ TA =25 oC  
at Rated DC Blocking Voltage @ TA=125 oC  
VF  
IR  
1.3  
5
50  
uA  
uA  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Trr  
Cj  
150  
250  
500  
nS  
pF  
10  
105  
32  
R
oC /W  
θJA  
R
θJL  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to +150  
oC  
TSTG  
oC  
1. Reverse Recovery Test Conditions: I  
F=0.5A, IR=1.0A, IRR=0.25A  
Notes:  
2. Measured at 1 MHz and Applied V =4.0 Volts  
R
3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B.  
with 0.2”x0.2” ( 5.0 x 5.0 mm ) Copper Pad Areas.  
Version: B07  
RATINGS AND CHARACTERISTIC CURVES (RS1A THRU RS1M)  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.2- TYPICAL REVERSE CHARACTERISTICS  
1.2  
1.0  
30  
10  
RESISTIVE OR  
INDUCTIVE LOAD  
Tj=1500C  
1
0.5  
Tj=1000C  
0.1  
P.C.B. MOUNTED ON 0.2X0.2"  
(5.0X5.0mm) COPPER PAD AREAS  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
Tj=250C  
LEAD TEMPERATURE. (oC)  
0.01  
0.001  
FIG.3- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
50  
TL=90O  
8.3ms Single Half Sine Wave  
JEDEC Method  
C
0
20  
40  
60  
80  
100  
120  
140  
40  
30  
20  
10  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.5- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS PER LEG  
30  
10  
0
1
10  
NUMBER OF CYCLES AT 60Hz  
100  
FIG.4- TYPICAL JUNCTION CAPACITANCE  
Tj=1250C  
40  
Tj=25OC  
f=1.0MHz  
Vsig=50mVp-p  
1
Tj=250C  
10  
0.1  
Pulse Width=300  
1% Duty Cycle  
s
0.01  
1
1.0  
1.2  
1.4  
1.6  
1.8  
0.4  
0.6  
0.8  
1
10  
100  
REVERSE VOLTAGE. (V)  
FORWARD VOLTAGE. (V)  
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50W  
NONINDUCTIVE  
10W  
NONINDUCTIVE  
trr  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
1W  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
Version: B07  

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