S1GB [TSC]

1.0 AMP. Surface Mount Rectifiers; 1.0 AMP 。表面贴装整流器
S1GB
型号: S1GB
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

1.0 AMP. Surface Mount Rectifiers
1.0 AMP 。表面贴装整流器

文件: 总2页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S1AB THRU S1MB  
1.0 AMP. Surface Mount Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
1.0 Ampere  
SMB/DO-214AA  
Features  
.082(2.08)  
.076(1.93)  
For surface mounted application  
Glass passivated junction chip.  
Low forward voltage drop  
High current capability  
Easy pick and place  
High surge current capability  
Plastic material used carries Underwriters  
Laboratory Classification 94V-O  
High temperature soldering:  
260oC / 10 seconds at terminals  
.147(3.73)  
.137(3.48)  
.187(4.75)  
.167(4.25)  
.012(.31)  
.006(.15)  
.103(2.61)  
.078(1.99)  
.012(.31)  
.006(.15)  
Mechanical Data  
.056(1.41)  
.035(0.90)  
.008(.20)  
.004(.10)  
Case: Molded plastic  
Terminals: Solder plated  
Polarity: Indicated by cathode band  
Packaging: 12mm tape per EIA STD RS-481  
Weight: 0.093 gram  
.208(5.28)  
.200(5.08)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
S1  
S1  
S1  
S1  
S1  
S1  
S1  
Type Number  
Units  
AB BB DB GB JB KB MB  
50 100 200 400 600 800 1000  
35 70 140 280 420 560 700  
50 100 200 400 600 800 1000  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current @TL =110  
I(AV)  
1.0  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
30  
Maximum Instantaneous Forward Voltage  
@ 1.0A  
1.1  
VF  
IR  
Maximum DC Reverse Current @ TA =25℃  
at Rated DC Blocking Voltage @ TA=125℃  
5
50  
uA  
uA  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance (Note 1)  
Operating Temperature Range  
Storage Temperature Range  
/W  
Rθ  
30  
JL  
pF  
Cj  
TJ  
12  
-55 to +150  
-55 to +150  
TSTG  
Notes: 1. Measured at 1 MHz and Applied VR=4.0 Volts  
2. Measured on P.C. Board with 0.27 x 0.27” (7.0 x 7.0mm) Copper Pad Areas.  
- 494 -  
RATINGS AND CHARACTERISTIC CURVES (S1AB THRU S1MB)  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.2- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
1.2  
1.0  
100  
50  
0.8  
0.6  
0.4  
20  
10  
5
.20IN2 (5.0mm2) x 0.5mil  
inches(0.013mm)  
Thick Copper Pad Areas  
8.3ms Single  
Half Sine Wave  
Tj=Tj max  
0.2  
0
2
1
0
20  
40  
60  
80  
100  
120  
140  
160  
1
2
5
10  
20  
50  
100  
LEAD TEMPERATURE. (oC)  
NUMBER OF CYCLES AT 60Hz  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
FIG.3- TYPICAL FORWARD CHARACTERISTICS  
100  
100  
50  
20  
10  
10  
5
Tj=1250C  
1
2
1.0  
Tj=750C  
0.5  
0.1  
0.2  
0.1  
Tj=250C  
0.01  
0.05  
0.02  
0.01  
0.001  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FORWARD VOLTAGE. (V)  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
100  
50  
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
20  
10  
5
2
1
1
10  
100  
0.01  
0.1  
REVERSE VOLTAGE. (V)  
- 495 -  

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