S1K [TSC]
1.0 AMP. Surface Mount Rectifiers; 1.0 AMP 。表面贴装整流器
| 型号： | S1K |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1A - S1M
1.0 AMP. Surface Mount Rectifiers
SMA/DO-214AC
Features
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For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0
High temperature soldering:
260oC / 10 seconds at terminals
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Mechanical Data
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Case: Molded plastic
Dimensions in inches and (millimeters)
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.064 gram
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol S1A S1B S1D S1G S1J S1K S1M Units
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @TL =110 oC
I(AV)
1.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
30
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
IR
1.1
Maximum DC Reverse Current @ TA =25 oC
1.0
50
uA
uA
at Rated DC Blocking Voltage @ TA=125 oC
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance ( Note 2 )
Trr
Cj
1.8
12
uS
pF
R
27
75
30
85
θJL
Typical Thermal Resistance (Note 3)
oC/W
R
θJA
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
Notes:
3. Measured on P.C. Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
Version: C07
RATINGS AND CHARACTERISTIC CURVES (S1A THRU S1M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
Tj=1250C
1
Tj=750C
0
20
40
60
80
100
120
140
160
0.1
LEAD TEMPERATURE. (oC)
Tj=250C
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0.01
100
50
0.001
0
20
40
60
80
100
120
140
20
10
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
5
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
8.3ms Single
Half Sine Wave
Tj=Tj max
2
1
50
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
20
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
5
100
50
2
1
Tj=250C
f=1.0MHz
Vsig=50mVp-p
20
10
0.5
0.2
0.1
5
0.05
2
1
0.02
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
0.01
0.1
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: C07
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