S3K [TSC]
3.0 AMPS. Surface Mount Rectifiers; 3.0安培。表面贴装整流器
| 型号： | S3K |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S3A - S3M
3.0 AMPS. Surface Mount Rectifiers
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0
High temperature soldering:
260oC / 10 seconds at terminals
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
.061(1.56)
.050(1.26)
.008(.20)
.004(.10)
ꢀ
ꢀ
.063(1.6)
.039(1.0)
.320(8.13)
.305(7.75)
Mechanical Data
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Molded plastic
Dimensions in inches and (millimeters)
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol S3A S3B S3D S3G S3J S3K S3M Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum DC Blocking Voltage
100 200 400 600 800 1000
Maximum Average Forward Rectified Current
@TL =105 oC
I(AV)
3.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
100
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
IR
1.15
Maximum DC Reverse Current @ TA =25 oC
10.0
250
uA
uA
at Rated DC Blocking Voltage @ TA=125 oC
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Trr
Cj
2.5
60
uS
pF
R
R
13
47
Typical Thermal Resistance (Note 3)
oC/W
θJL
θJA
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +150
oC
oC
TSTG
-55 to +150
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
Notes:
3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.
Version: B07
RATINGSAND CHARACTERISTIC CURVES (S3A THRU S3M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.2- TYPICAL REVERSE CHARACTERISTICS
CURVE
100
3.5
3.0
2.5
2.0
1.5
1.0
0
Tj=125 C
10
RESISTIVE OR
INDUCTIVE LOAD
2
P. C.BOARD MOUNTED ON 10mm
PAD AREAS
0.5
1
0
0
Tj=25 C
50
60
70
80
90
100 110
120 130 140 150
165
o
LEAD TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
0.1
0
20
40
60
80
100
120
140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
50
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
8.3ms Single Half Sine Wave
JEDEC Method
Tj=Tj max
10
30
100
1
5
10
50
NUMBER OF CYCLES AT 60Hz
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
3.0
1.0
50
0.3
0.1
0
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
10
0
Tj=25 C
0.03
PULSE WIDTH-300
2% DUTY CYCLE
S
5
0.01
0.6
100
5
10
REVERSE VOLTAGE. (V)
50
1.4
1.6
0.7
0.8
0.9
1.0
1.2
1
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TESTCIRCUIT DIAGRAM
50W
10W
NONINDUCTIVE
trr
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
0
50Vdc
(approx)
(-)
GENERATOR
(NOTE 2)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: B07
相关型号：
S3K-E3
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
S3K-E3/57T
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
S3K-E3/9AT
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
S3K-GT3
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AA, PLASTIC PACKAGE-2
SENSITRON
S3K-HE3
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
S3K-HE3/57T
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
S3K-HE3/9AT
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
S3K-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
WTE
S3K/9T
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明