SD103AW [TSC]

Schottky Barrier Switching Diode; 肖特基开关二极管
SD103AW
型号: SD103AW
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Schottky Barrier Switching Diode
肖特基开关二极管

二极管 开关
文件: 总2页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SD103AW THRU SD103CW  
Schottky Barrier Switching Diode  
Voltage Range  
20 to 40 Volts  
400m Watts Power Dissipation  
SOD-123  
Features  
0.022(0.55)  
Typ. Min.  
Low forward voltage drop  
Guard ring construction for transient protection  
Negligible reverse recovery time  
Low reverse capacitance  
0.053(1.35)  
Max.  
0.152(3.85)  
0.140(3.55)  
0.112(2.85)  
0.100(2.55)  
Mechanical Data  
Case: SOD-123, plastic  
Polarity: Cathode band  
Terminals: Solderable per MIIL-STD-202,  
Method 208  
Marking: Date Code and Type Code or  
Date Code only  
0.010(0.25)  
Min.  
0.067(1.70)  
0.55(1.40)  
0.006(0.15)  
Typ. Min.  
Type Code: SD103AW  
SD103BW  
S4  
S5  
S6  
0.004(0.10)  
Max.  
SD103CW  
Weight: 0.01 grams (approx.)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol SD103AW SD103BW SD103CW Units  
VRRM  
VRWM  
VR  
VR(RMS)  
IFM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
28  
30  
20  
14  
RMS Reverse Voltage  
V
mA  
21  
350  
Forward Continuous Current (Note 1)  
Non-repetitive Peak Forward Surge Current  
A
IFSM  
1.5  
@ t 1.0s  
Power Dissipation (Note 1)  
Pd  
mW  
OC /W  
OC  
400  
300  
Thermal Resistance Junction to Ambient Air  
(Note 1)  
Operating and Storage Temperature Range  
Electrical Characteristics  
Type Number  
RθJA  
TJ, TSTG  
-65 to + 125  
Symbol  
Min  
Typ  
Max  
Units  
Reverse Breakdown Voltage (Note 2)  
SD103AW IR=100uA  
40  
30  
20  
V(BR)  
IR  
-
-
V
SD103BW IR=100uA  
SD103CW IR=100uA  
Peak Reverse Current SD103AW VR=30V  
SD103BW VR=20V  
-
-
5.0  
uA  
SD103CW VR=10V  
0.37  
0.60  
-
Forward Voltage Drop  
VF  
Cj  
trr  
-
-
-
-
V
Junction Capacitance  
Reverse Recovery Time IF=IR=200mA  
Irr=0.1 x IR, RL=100Ω  
VR=0, f=1.0MHz  
50  
10  
Pf  
nS  
-
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.  
2. Pulse Test: Pulse width = 300uS, Duty cycle 2%.  
- 30 -  
RATINGS AND CHARACTERISTIC CURVES (SD103AW - SD103CW)  
FIG.1- TYPICAL FORWARD CHARACTERISTICS  
FIG.2- JUNCTION CAPACITANCE VS  
REVERSE VOLTAGE  
1000  
100  
100  
10  
10  
1.0  
1.0  
0.10  
0.01  
0.1  
0
0.5  
1.0  
0
10  
20  
30  
40  
VF, FORWARD VOLTAGE (V)  
VR, REVERSE VOLTAGE (V)  
- 31 -  

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