SDB16 [TSC]
1.0 AMP. Schottky Barrier Rectifiers; 1.0 AMP 。肖特基势垒整流器
| 型号： | SDB16 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDBS12 THRU SDBS110
1.0 AMP. Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
DB
Features
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Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
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High temperature soldering:
260oC/ 10 seconds at terminals
Small size, single installation lead solderable per
MIL-STD-202 Method 208
DBS
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.205(5.2)
.195(5.0)
.047(1.20)
.040(1.02)
Mechanical Data
.404(10.3)
.386(9.80)
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Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
.255(6.5)
.245(6.2)
.335(8.51)
.320(8.13)
450
.013(0.33)
.0088(0.22)
.130(3.30)
.120(3.05)
.060(1.53)
.040(1.02)
.013(0.33)
.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SDB SDB SDB SDB SDB SDB SDB
Symbol
Type Number
Units
12
13
14
15
16
19
110
SDBS SDBS SDBS SDBS SDBS SDBS SDBS
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
19
90
63
90
110
100
70
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I(AV)
1.0
A
A
V
IFSM
30
Maximum Instantaneous Forward Voltage
(Note 1) @ 1.0A
VF
IR
0.5
10
0.75
5.0
0.80
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=100℃
0.4
0.05
0.5
mA
mA
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Cj
50
pF
℃/W
℃/W
℃
RθJL
RθJA
TJ
28
88
Operating Temperature Range
Storage Temperature Range
-65 to +125
-65 to +150
-65 to +150
℃
TSTG
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.5 x 0.5”(12 x 12mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- 50 -
RATINGS AND CHARACTERISTIC CURVES (SDBS12 THRU SDBS110)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1.0
0.5
0
50
40
RESISTIVE OR
INDUCTIVE LOAD
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
SDBS15-SDBS110
SDBS12- SDBS14
30
20
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
1
10
100
50
60
70
80
90 100 110 120 130 140 150 160 170
LEAD TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
50
Tj=250C
SDBS12-SDBS14
100
10.0
SDBS15-SDBS16
SDBS12-SDBS14
Tj=1000C
10
1
SDBS15-SDBS16
SDBS19-SDBS110
1
SDBS19-SDBS110
0.1
PULSE WIDTH=300
1% DUTY CYCLE
S
0.1
Tj=250C
SDBS12-SDBS14
SDBS15-SDBS110
0.01
0.01
0
20
40
60
80
100
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
400
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10
.1
1.0
10
100
REVERSE VOLTAGE. (V)
- 51 -
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