SDBS12_1 [TSC]
1.0 AMP. Schottky Barrier Bridge Rectifiers; 1.0 AMP 。肖特基势垒整流桥
| 型号： | SDBS12_1 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Schottky Barrier Bridge Rectifiers |
| 文件： | 总2页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDB(S)12 - SDB(S)115
1.0 AMP. Schottky Barrier Bridge Rectifiers
DB
Features
ꢀ
Metal to silicon rectifier, majority carrier
conduction
DBS
ꢀ
ꢀ
ꢀ
ꢀ
Low forward voltage drop
Easy pick and place
High surge current capability
.205(5.2)
.195(5.0)
.047(1.20)
.040(1.02)
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
.404(10.3)
.386(9.80)
ꢀ
ꢀ
.255(6.5)
.245(6.2)
High temperature soldering:
o
.335(8.51)
.320(8.13)
450
.013(0.33)
.0088(0.22)
260 C/ 10 seconds at terminals
ꢀ
Small size, single installation lead solderable
per MIL-STD-202 Method 208
.130(3.30)
.120(3.05)
.060(1.53)
.040(1.02)
.013(0.33)
.003(0.076)
Mechanical Data
Dimensions in inches and (millimeters)
ꢀ
ꢀ
ꢀ
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SDB SDB SDB SDB SDB SDB SDB SDB
Symbol
Type Number
Units
12
13
14
15
16
19
110 115
SDBS SDBS SDBS SDBS SDBS SDBS SDBS SDBS
12
13
14
15
16
19
110
115
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
20
30
40
50
60
90 100 150
63 70 105
90 100 150
V
V
V
VRRM
VRMS
VDC
14
20
21
30
28
40
35
50
42
60
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at TL(See Fig. 1)
I(AV)
IFSM
VF
1.0
30
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
A
V
Maximum Instantaneous Forward Voltage
0.5
10
0.75
0.80
0.95
(Note 1) @ 1.0A
o
0.4
0.1
0.5
mA
mA
Maximum DC Reverse Current @ T =25
A
C
IR
o
5.0
50
at Rated DC Blocking Voltage @ T =100 C
A
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Cj
pF
R
28
88
o
θJL
C /W
R
θJA
o
Operating Temperature Range
Storage Temperature Range
TJ
-65 to +125
-65 to +150
-65 to +150
C
o
TSTG
C
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.5” x 0.5” (12 mm x 12mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (SDB(S)12 THRU SDB(S)115)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
CURVE
SURGE CURRENT
1.0
0.5
0
50
RESISTIVE OR
INDUCTIVE LOAD
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
40
SDBS15-SDBS115
SDBS12- SDBS14
30
20
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
1
10
NUMBER OF CYCLES AT 60Hz
100
50
60
70
80
90 100 110 120 130 140 150 160 170
LEAD TEMPERATURE. (oC)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
FIG.3- TYPICAL FORWARD CHARACTERISTICS
Tj=250C
50
SDBS12-SDBS14
100
10
10.0
Tj=1000C
SDBS15-SDBS16
SDBS12-SDBS14
SDBS15-SDBS16
1
1
SDBS19-SDBS115
SDBS19-SDBS115
0.1
0.1
Tj=250C
PULSE WIDTH=300
1% DUTY CYCLE
S
SDBS12-SDBS14
SDBS15-SDBS115
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0.01
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10
1
400
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
0.1
10
.1
1.0
10
100
1
10
100
0.01
0.1
T, PULSE DURATION. (sec)
REVERSE VOLTAGE. (V)
Version: A06
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