SF2002PT [TSC]
20.0 AMPS. Glass Passivated Super Fast Rectifiers; 20.0安培。玻璃钝化超快速整流器
| 型号： | SF2002PT |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20.0 AMPS. Glass Passivated Super Fast Rectifiers |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF2001PT THRU SF2008PT
20.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
20.0 Amperes
TO-3P/TO-247AD
Features
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Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory Flammability
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Classifications 94V-0
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Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260oC / 10 seconds, 0.16”(4.06mm) lead lengths at 5 lbs.,
(2.3kg) tesion
Mechanical Data
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Cases: JEDEC TO-3P/TO-247AD molded plastic
Terminals: Leads solderable per MIL-STD-750,
Method 2026
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Polarity: As marked
Mounting position: Any
Weight: 0.2 ounce, 5.6 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
TYPE NUMBER
SF SF SF SF SF SF SF SF Units
2001 2002 2003 2004 2005 2006 2007 2008
PT PT PT PT PT PT PT PT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 150 200 300 400 500 600
V
V
V
VRRM
VRMS
VDC
35 70 105 140 210 280 350 420
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
20
Maximum Average Forward Rectified Current
at Tc=100℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
I(AV)
IFSM
VF
A
280
A
Maximum Instantaneous Forward Voltage @10.0A
@20A
1.7
0.21
0.95
1.3
V
Maximum D.C. Reverse Current at Rated DC
Blocking Voltage
@ Tc=25℃
10
400
IR
uA
@ Tc=100℃
Maximum Reverse Recovery Time (Note 2) TJ=25℃
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Trr
Cj
RθJC
TJ
35
175
2.5
nS
pF
℃/W
℃
-55 to +150
-55 to +150
℃
TSTG
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A.
3. Thermal Resistance from Junction to Case Mounted on Heatsink size 3”x5”x0.25” Al-Plate.
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RATINGS AND CHARACTERISTIC CURVES (SF2001PT THRU SF2008PT)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.3- TYPICAL REVERSE CHARACTERISTICS
PER LEG
1000
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
25
20
15
10
5
100
TJ=1000C
10
0
TJ=750C
0
50
100
150
CASE TEMPERATURE. (oC)
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
TJ=250C
300
250
200
150
0.1
0
20
40
60
80
100
120
140
8.3ms Single Half Sine Wave
JEDEC Method
TJ = TJ max.
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
40
100
50
0
SF2001PT-SF2004PT
20
1
2
5
10
20
50
100
10
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
1000
500
SF2005PT-SF2006PT
1
200
100
50
SF2007PT-SF2008PT
Tj=250C
f=1MHz
Vsig=50mVp-p
Pulse Width=300
2% Duty Cycle
s
0.2
0.1
20
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
0.1
0.5
1
5
10
50
100
REVERSE VOLTAGE. (V)
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