SF51 [TSC]
5.0 AMPS. Super Fast Rectifiers; 5.0安培。超快速整流器
| 型号： | SF51 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 5.0 AMPS. Super Fast Rectifiers |
| 文件： | 总2页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF51 - SF58
5.0 AMPS. Super Fast Rectifiers
DO-201AD
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free., solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
ꢀ
ꢀ
Dimensions in inches and (millimeters)
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 1.2 grams
ꢀ
ꢀ
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SF SF SF SF SF SF SF SF
Units
Type Number
51 52 53 54 55 56 57 58
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
50 100 150 200 300 400 500 600
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
5.0
A
A
V
I(AV)
.375 (9.5mm) Lead Length @TA = 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
150
IFSM
Maximum Instantaneous Forward Voltage
0.975
1.3
1.7
VF
@ 5.0A
o
Maximum DC Reverse Current @ TA=25
o
C
5.0
uA
uA
IR
at Rated DC Blocking Voltage @ TA=100 C
100
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Trr
Cj
35
nS
pF
120
60
o
R
20
θJA
Typical Thermal Resistance (Note 3)
C/W
R
5.0
θJL
o
Operating Temperature Range
Storage Temperature Range
TJ
-65 to +125
-65 to +150
C
o
TSTG
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B
Notes:
Version: A06
RATINGS AND CHARACTERISTIC CURVES ( SF51 THRU SF58 )
FIG.1- MAXIMUM AVERAGE FORWARD CURRENT
DERATING
FIG.2- TYPICAL REVERSE CHARACTERISTICS
6.0
1000
5.0
4.0
Tj=1000C
100
3.0
2.0
1.0
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
10
Tj=250C
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE. (OC)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
150
125
0.1
0
20
40
60
80
100
120
140
8.3ms Single Half Sine Wave
JEDEC Method
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
100
75
FIG.5- TYPICAL FORWARD CHARACTERISTICS
50
25
0
100
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
10
FIG.4- TYPICAL JUNCTION CAPACITANCE
180
160
1.0
140
120
100
80
SF58
Tj=250C
0.1
Tj=250C
SF54
60
40
PULSE WIDTH-300
2% DUTY CYCLE
S
0.01
0.4
0.1
0.5
1
2
5
10 20
50 100 200
500 1000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
0
50Vdc
(approx)
(-)
GENERATOR
(NOTE 2)
-0.25A
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: A06
相关型号：
SF51-G
Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
SF51-GT3
Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
SF51-T
Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON
SF51-T3-LF
Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
SF51-TB-LF
Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明