SFAF808G [TSC]
Isolation 8.0 AMPS. Glass Passivated Super Fast Rectifiers; 隔离8.0安培。玻璃钝化超快速整流器
| 型号： | SFAF808G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolation 8.0 AMPS. Glass Passivated Super Fast Rectifiers |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFAF801G THRU SFAF808G
Isolation 8.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
8.0 Amperes
ITO-220AC
Features
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Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
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Cases: ITO-220AC molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds 0.25”,(6.35mm) from
case.
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Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SFAF SFAF SFAF SFAF SFAF SFAF SFAF SFAF
801G 802G 803G 804G 805G 806G 807G 808G
Symbol
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 150 200 300 400 500 600
V
V
V
VRRM
VRMS
VDC
35
70 105 140 210 280 350 420
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
Maximum Average Forward Rectified
Current @TC = 100℃
8.0
A
A
V
I(AV)
IFSM
VF
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 8.0A
Maximum DC Reverse Current
@ TA=25℃ at Rated DC Blocking Voltage
@ TA=100℃
125
0.975
90
1.3
1.7
10
400
35
uA
uA
nS
pF
℃/W
℃
IR
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
Cj
RθJC
TJ
60
4.0
Operating Temperature Range
Storage Temperature Range
-65 to +150
-65 to +150
℃
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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RATINGS AND CHARACTERISTIC CURVES (SFAF801G THRU SFAF808G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
10
8
6
100
TJ=1000C
4
2
TJ=750C
10
0
0
50
100
150
CASE TEMPERATURE. (oC)
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
TJ=250C
150
120
90
60
30
0
TJ=1250C
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
100
30
10
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
AF804G
A806G
~SF
FIG.5- TYPICAL JUNCTION CAPACITANCE
3
AF808G
AF801G
AF805G~SFF
SF
100
90
SF
Tj=250C
SF
1
AF807G~SF
AF801G~SF
SF
SF
0.3
80
AF804G
AF805G~SF
70
60
0.1
AF808G
0.03
Tj=25oC
Pulse Width=300
1% Duty Cycle
50
40
s
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
2
5
10
20
50
100 200
500
1000
FORWARD VOLTAGE. (V)
REVERSE VOLTAGE. (V)
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