SFF2002G [TSC]

Isolated 20.0 AMPS. Glass Passivated Super Fast Rectifiers; 孤立20.0安培。玻璃钝化超快速整流器
SFF2002G
型号: SFF2002G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Isolated 20.0 AMPS. Glass Passivated Super Fast Rectifiers
孤立20.0安培。玻璃钝化超快速整流器

二极管 瞄准线 功效 局域网
文件: 总2页 (文件大小:220K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SFF2001G - SFF2008G  
Isolated 20.0AMPS.  
Glass Passivated Super Fast Rectifiers  
ITO-220AB  
Features  
High efficiency, low VF  
High current capability  
High reliability  
High surge current capability  
Low power loss.  
For use in low voltage, high frequency inventor,  
free wheeling, and polarity protection application  
Mechanical Data  
Cases: ITO-220AB Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-202, Method 208 guaranteed  
Polarity: As marked  
Dimensions in inches and (millimeters)  
High temperature soldering guaranteed:  
o
260 C/10 seconds .16”,(4.06mm) from case.  
Weight: 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SFF  
SFF  
SFF  
SFF  
SFF  
SFF  
SFF  
SFF  
Symbol  
Units  
Type Number  
2001G 2002G 2003G 2004G 2005G 2006G 2007G 2008G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100 150 200 300 400 500 600  
70 105 140 210 280 350 420  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
100 150 200 300 400 500 600  
Maximum Average Forward Rectified  
o
20  
A
A
V
I(AV)  
Current @TC = 100 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
150  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 10A  
0.975  
1.30  
1.70  
VF  
o
10  
400  
35  
uA  
uA  
nS  
pF  
Maximum DC Reverse Current @ TA=25 C  
o
IR  
at Rated DC Blocking Voltage @ TA=100 C  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Trr  
90  
Cj  
o
2.5  
C/W  
R
θJC  
o
TJ  
-65 to +150  
-65 to +150  
C
o
Storage Temperature Range  
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Thermal Resistance from Junction to Case Mounted on Heatsink.  
Notes:  
Version: A06  
RATINGS AND CHARACTERISTIC CURVES (SFF2001G THRU SFF2008G)  
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE  
FIG.2- TYPICAL REVERSE CHARACTERISTICS  
1000  
20  
16  
12  
100  
8
TJ=1000C  
10  
4
0
0
50  
CASE TEMPERATURE. (oC)  
100  
150  
TJ=750C  
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT PER LEG  
150  
120  
90  
60  
30  
0
TJ=250C  
TJ=1250C  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
8.3ms Single Half Sine Wave  
JEDEC Method  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.5- TYPICAL FORWARD CHARACTERISTICS  
PER LEG  
100  
SFF2001G-04G  
30  
1
2
5
10  
20  
50  
100  
NUMBER OF CYCLES AT 60Hz  
10  
FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG  
3
100  
90  
SFF2005G-06G  
1
Tj=250C  
SFF2007G-08G  
80  
70  
60  
0.3  
0.1  
Tj=25oC  
Pulse Width=300  
1% Duty Cycle  
s
0.03  
0.01  
50  
40  
1
2
5
10  
20  
50  
100 200  
500  
1000  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
REVERSE VOLTAGE. (V)  
FORWARD VOLTAGE. (V)  
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50  
10  
trr  
NONINDUCTIVE  
NONINDUCTIVE  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
0
50Vdc  
(approx)  
(-)  
GENERATOR  
(NOTE 2)  
-0.25A  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
Version: A06  

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