SK32B_11 [TSC]
3.0AMPS Surface Mount Schottky Barrier Rectifiers; 3.0AMPS表面贴装肖特基整流器
| 型号： | SK32B_11 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0AMPS Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SK32B - SK320B
3.0AMPS Surface Mount Schottky Barrier Rectifiers
SMB/DO-214AA
RoHS
Pb
COMPLIANCE
Features
UL Recognized File # E-326243
For surface mounted application
Metal to sillicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260℃/10 seconds at terminals
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Dimensions in inches and (millimeters)
Marking Diagram
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.1 gram
SK3XB = Specific Device Code
G
Y
= Green Compound
= Year
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SK
32B
20
SK
33B
30
SK
34B
40
SK
35B
50
SK
36B
60
SK
SK
SK
SK
320B
200
Symbol
Unit
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
39B 310B 315B
VRRM
VRMS
VDC
90
63
90
100
70
150
105
150
V
V
V
A
14
20
21
30
28
40
35
50
42
60
3.0
140
200
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
IF(AV)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load
IFSM
70
A
V
Maximum Instantaneous Forward Voltage (Note 1)
@ 3.0A
VF
0.5
10
0.75
5
0.85
0.95
0.5
0.1
-
Maximum Reverse Current @ Rated VR TA=25 ℃
IR
T =100 ℃
A
mA
T =125℃
A
2
-
RθjL
RθjA
17
75
OC/W
Typical Thermal Resistance
OC
OC
Operating Temperature Range
Storage Temperature Range
TJ
- 55 to + 125
- 55 to + 150
- 55 to + 150
TSTG
Note 1: Pluse Test with PW=300 usec, 1% Duty Cycle
Version:E11
RATINGS AND CHARACTERISTIC CURVES (SK32B THRU SK320B)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
3.5
3
150
120
90
60
30
0
RESISTIVE OR
INDUCTIVELOAD
AT RATED TL
8.3mS Single Half Sine Wave
JEDEC Method
2.5
2
SK35B-SK320B
SK32B-SK34B
1.5
1
0.5
0
50
60
70
80
90
100
110
120
130
140
150
1
10
100
LEAD TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
SK35B-SK36B
100
100
10
TA=125℃
10
1
SK32B-SK34B
TA=75℃
1
0.1
TA=25℃
SK39B-SK320B
0.1
0.01
0.01
0.001
SK32B-SK34B
SK35B-SK320B
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
1000
100
10
SK32B-SK34B
SK35B-SK36B
SK39B-SK320B
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
T-PULSE DURATION(s)
Version:E11
相关型号：
SK32CG
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-214AB, SMCG, 2 PIN
MCC
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