SK32B [TSC]

3.0 AMPS. Surface Mount Schottky Barrier Rectifiers; 3.0安培。表面贴装肖特基整流器
SK32B
型号: SK32B
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

3.0 AMPS. Surface Mount Schottky Barrier Rectifiers
3.0安培。表面贴装肖特基整流器

文件: 总2页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SK32B THRU SK310B  
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers  
Voltage Range  
20 to 100 Volts  
Current  
3.0 Amperes  
SMB/DO-214AA  
Features  
.082(2.08)  
.076(1.93)  
For surface mounted application  
Metal to silicon rectifier, majority carrier conduction  
Low forward voltage drop  
.147(3.73)  
.137(3.48)  
Easy pick and place  
High surge current capability  
Plastic material used carriers Underwriters  
Laboratory Classification 94V-O  
Epitaxial construction  
.187(4.75)  
.167(4.25)  
.012(.31)  
.006(.15)  
High temperature soldering:  
260oC / 10 seconds at terminals  
.103(2.61)  
.078(1.99)  
Mechanical Data  
.012(.31)  
.006(.15)  
.056(1.41)  
.035(0.90)  
.008(.20)  
.004(.10)  
Case: Molded plastic  
Terminals: Solder plated  
Polarity: Indicated by cathode band  
Packaging: 16mm tape per EIA STD RS-481  
Weight: 0.1 gram  
.208(5.28)  
.200(5.08)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol SK  
SK  
SK  
SK  
SK  
SK  
SK  
Type Number  
Units  
32B 33B 34B 35B 36B 39B 310B  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
90  
63  
90  
100  
70  
100  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current at TL (See Fig. 1)  
I(AV)  
IFSM  
VF  
3.0  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
100  
0.5  
150  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
0.5  
20  
0.75  
0.85  
Maximum DC Reverse Current (Note 1)  
@ TA =25at Rated DC Blocking Voltage  
@ TA=100℃  
mA  
mA  
0.6  
20.0  
IR  
10.0  
Typical Thermal Resistance ( Note 2 )  
RθJL  
RθJA  
TJ  
17  
75  
/W  
Operating Temperature Range  
Storage Temperature Range  
-55 to +125  
-55 to +150  
-55 to +150  
TSTG  
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle  
2. Measured on P.C.Board with 0.4 x 0.4”(10 x 10mm) Copper Pad Areas.  
- 70 -  
RATINGS AND CHARACTERISTIC CURVES (SK32B THRU SK310B)  
FIG. 1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG. 2- MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
150  
3.0  
2.0  
1.0  
AT RATED TL  
8.3ms Single Half Sine Wave  
JEDEC Method  
RESISTIVE OR  
INDUCTIVELOAD  
120  
90  
60  
30  
0
PCB MOUNTED ON 0.4X0.4"  
(10X10mm)COPPER PAD AREAS  
0
50  
60  
70  
80  
90  
100 110 120 130 140 150 160  
1
10  
NUMBER OF CYCLES AT 60Hz  
100  
LEAD TEMP ERATURE.( OC)  
FIG. 4- TYPICAL REVERSE CHARACTERISTICS  
20  
FIG. 3- TYPICAL FORWARD CHARACTERISTICS  
Tj=125OC  
40  
10  
TJ=125OC  
10  
1
Tj=125OC  
TJ=75OC  
PULSE WIDTH=300 S  
1% DUTY CYCLE  
1
0.1  
Tj=25OC  
0.1  
0.01  
TJ=25OC  
SK39B-SK310B  
SK32B-SK34B  
SK35B-SK36B  
SK39B-SK310B  
SK32B-SK34B  
SK35B-SK36B  
0.001  
0.01  
0
20  
40  
60  
80  
100 120 140  
1.0  
FORWARD VOLTAGE.(V)  
1.2  
1.4  
1.5  
0
0.2  
0.4  
0.6  
0.8  
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)  
FIG. 5- TYPICAL JUNCTION CAPACITANCE  
FIG.6- TYPICAL TRANSIENT THERMAL  
CHARACTERISTICS  
100  
1000  
Tj=25OC  
f=1.0MHz  
Vsig=50mVp-p  
10  
100  
1
0.1  
0.01  
10  
0.1  
0.1  
1
10  
100  
1
10  
100  
t, PULSE DURATION, (sec)  
REVERSE VOLTAGE.(V)  
- 71 -  

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