SMA4S30AH [TSC]
400W, 12V â 60V Surface Mount Transient Voltage Suppressor;
| 型号： | SMA4S30AH |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 400W, 12V â 60V Surface Mount Transient Voltage Suppressor |
| 文件： | 总6页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMA4S12AH - SMA4S60AH
Taiwan Semiconductor
400W, 12V – 60V Surface Mount Transient Voltage Suppressor
FEATURES
KEY PARAMETERS
● AEC-Q101 qualified
PARAMETER
VALUE
12 – 60
13.4 – 74.1
400
UNIT
V
● Glass passivated junction chip
VWM
VBR
● Maximum VBR temperature coefficient: 0.095%/°C
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
V
PPPM
W
TJ MAX
Package
175
°C
● Halogen-free according to IEC 61249-2-21
SOD-128
APPLICATIONS
● Switching mode power supply (SMPS)
● Motor for BLDC
● Lighting application
● Battery Management System
● Automotive
MECHANICAL DATA
● Case: SOD-128
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Uni-directional
● Weight: 28.6mg (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
PPPM
400
W
10/1000us waveform (1)
Steady state power dissipation at TL=25°C (2)
Forward Voltage @ IF=25A for Uni-directional only (3)
Junction temperature
PD
VF
7.5
W
V
3.5
TJ
-55 to +175
-55 to +175
°C
°C
Storage temperature
TSTG
Notes:
1. Non-repetitive current pulse per fig. 3 and derated above TA=25°C Per Fig. 1
2. Units mounted on PCB (5mm x 5mm Cu pad test board)
3. Pulse test with PW=0.3 ms
1
Version: A1805
SMA4S12AH - SMA4S60AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJL
TYP.
20
UNIT
°C/W
°C/W
°C/W
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
RӨJA
62
RӨJC
16
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Maximum
Maximum
peak impulse
current
IPPM
Breakdown
blocking
leakage
current
Working
stand-off
voltage
VWM
Maximum
clamping
voltage
VC@IPPM
(V)
voltage
VBR@IT
(V)
Test
current
IT
Marking
code
Part number
IR@VWM
(µA)
(Note 1)
(A)
(Note 1)
(mA)
(V)
tp =10/1000 μs
Min. Max.
13.4 14.8
SMA4S12AH
SMA4S15AH
SMA4S18AH
SMA4S20AH
SMA4S21AH
SMA4S22AH
SMA4S24AH
SMA4S25AH
SMA4S26AH
SMA4S30AH
SMA4S33AH
SMA4S36AH
SMA4S39AH
SMA4S40AH
SMA4S43AH
SMA4S47AH
SMA4S51AH
SMA4S56AH
SMA4S60AH
4S012
4S015
4S018
4S020
4S021
4S022
4S024
4S025
4S026
4S030
4S033
4S036
4S039
4S040
4S043
4S047
4S051
4S056
4S060
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
12
15
18
20
21
22
24
25
26
30
33
36
39
40
43
47
51
56
60
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
20.5
16.4
13.7
12.3
11.7
11.2
10.3
9.9
19.5
24.4
29.2
32.5
34.1
35.7
39.0
40.6
42.2
48.7
53.6
58.4
63.3
64.9
69.8
76.3
82.8
90.9
97.4
16.8 18.5
20.1 22.2
22.4 24.7
23.5 25.9
24.6 27.2
26.8 29.6
27.9 30.9
29.1 32.1
33.5 37.1
36.9 40.8
40.2 44.5
43.6 48.2
44.7 49.4
48.1 53.1
52.5 58.1
57.0 63.0
62.6 69.2
67.1 74.1
9.5
8.2
7.5
6.8
6.3
6.2
5.7
5.2
4.8
4.4
4.1
Note:
1. Pulse test with PW=30 ms
2
Version: A1805
SMA4S12AH - SMA4S60AH
Taiwan Semiconductor
ORDERING INFORMATION
ORDERING CODE
(Note 1)
PACKAGE
PACKING
SMA4SxxAH MWG
SOD-128
SOD-128
3,500 / 7” Plastic reel
SMA4SxxAH MXG
14,000 / 13” Plastic reel
Note:
1. "xx" defines voltage from 12V (SMA4S12AH) to 60V (SMA4S60AH)
3
Version: A1805
SMA4S12AH - SMA4S60AH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Pulse Power or Current vs. Initial Junction
Temperature
Fig.2 Steady State Power Derating
100
75
50
25
0
8
7
6
5
4
3
2
Heat sink
5mm x 5mm
Cu pad test board
1
0
0
25
50
75
100 125 150 175
0
25
50
75 100 125 150 175
TJ - INITAL TEMPERATURE (°C)
LEAD TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Typical Junction Capacitance
1000
100
10
160
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
140
SMA4S12AH
SMA4S30AH
Peak value IPPM
120
100
Rise time tr=10μs to 100% of IPPM
80
Half value-IPPM/2
10/1000μs waveform
60
40
SMA4S60AH
td
20
f=1.0MHz
Vsig=50mVp-p
0
0
0.5
1
1.5
2
2.5
3
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
REVERSE VOLTAGE (V)
Fig.5 Typical Transient Thermal Impedance
100
10
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE DURATION (s)
4
Version: A1805
SMA4S12AH - SMA4S60AH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOD-128
MARKING DIAGRAM
P/N
YW
F
= Marking Code
= Date Code
= Factory Code
Cathode band
5
Version: A1805
SMA4S12AH - SMA4S60AH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: A1805
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