SODDB3 [TSC]
400mW Trigger Diode (DIAC);
| 型号： | SODDB3 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 400mW Trigger Diode (DIAC) 数据判读及分析中心 |
| 文件： | 总4页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SODDB3/SODDB3T
Taiwan Semiconductor
Small Signal Product
400mW Trigger Diode (DIAC)
FEATURES
- Surface Mount Device SOD-123 packaged
- VBO=32V DB3
- Max. PD=400mW
MECHANICAL DATA
- Case: Plastic gull wing SOD-123 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 10.55mg (approximately)
- Moisture sensitivity level 1
SOD-123
- Pb free and RoHS compliant
APPLICATION
- These diacs are intended for use in thyrisitors phase control, circuits
for lamp dimming, universal motor speed control, and heat control
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Repetitive Peak on-state Current
tp=20μs, f=100Hz
ITRM
PD
2
A
Power Dissipation
400
mW
oC
oC
Junction Temperature
Storage Temperature Range
TJ
- 40 to +125
- 40 to +125
TSTG
PARAMETER
TEST CONDITION
SYMBOL MIN TYP MAX
UNIT
SODDB3
SODDB3T
SODDB3
SODDB3T
SODDB3
SODDB3T
28
32
36
34
±3
±2
VBO
Reverse Breakdown Voltage
Breakdown Voltage Symmetry
Dynamic Breakdown Voltage
C=22nF
V
30
32
[|+VBO1 |-
|-VBO2 |]
C=22nF
V
V
5
9
2
5
-
△I=[ IBO to IF=10mA]
|△V±|
tP=20μs, f=100Hz
Note
ITRM
VO
IR
Repetitive Peak on-state Current
Output Voltage
A
V
VB = 0.5VBO
Leakage Current
10
μA
μs
Rest Time
tr
1.5
SODDB3
100
15
IBO
Breakdown current
C=22nF
μA
SODDB3T
-
Note: Test circuit for output voltage
Document Number: DS_S1406002
Version: B15
SODDB3/SODDB3T
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 2 Power derating curve
Fig.1 Relative variation of VBO vs. junction temperature
1.08
200
150
100
50
1.06
1.04
1.02
1
0
25
50
75
100
125
0
25
50
75
100
125
150
Ambient temperature (°C)
Junction temperature (°C)
Fig. 3 Peak pulse current vs. pulse duration
10
1
f=100Hz
0.1
0.01
10
100
1000
10000
tp(μs)
Document Number: DS_S1406002
Version: B15
SODDB3/SODDB3T
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
SODDB3 RFG
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
SOD-123
Unit (mm)
Unit (inch)
DIM.
Min
Max
1.80
3.85
0.70
2.85
1.35
0.15
Min
Max
0.071
0.152
0.028
0.112
0.053
0.006
A
B
C
D
E
F
1.40
3.55
0.45
2.55
0.95
0.05
0.055
0.140
0.018
0.100
0.037
0.002
0.50 REF
0.02 REF
G
H
-
0.10
-
0.004
SUGGESTED PAD LAYOUT
Unit (mm)
Unit (inch)
DIM.
Min
2.25
0.90
4.05
0.95
Min
0.089
0.035
0.159
0.037
G
X
X1
Y
MARKING
Note: Apply positive voltage in cathode line and apply negative in another
electrode, it will show better I/V curve. It help user
differentiate the direction of purpose.
Cathode line
Document Number: DS_S1406002
Version: B15
SODDB3/SODDB3T
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: B15
Document Number: DS_S1406002
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