SRAF520 [TSC]

Isolated 5.0 AMPS. Schottky Barrier Rectifiers; 分离出5.0安培。肖特基势垒整流器
SRAF520
型号: SRAF520
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Isolated 5.0 AMPS. Schottky Barrier Rectifiers
分离出5.0安培。肖特基势垒整流器

二极管 瞄准线 功效 局域网
文件: 总2页 (文件大小:181K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SRAF520 - SRAF5150  
Isolated 5.0 AMPS. Schottky Barrier Rectifiers  
ITO-220AC  
.185(4.7)  
.173(4.4)  
.406(10.3)  
.390(9.90)  
.124(3.16)  
.118(3.00)  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
Features  
.606(15.5)  
.583(14.8)  
Isolated Plastic package.  
Low power loss, high efficiency.  
High current capability, Low VF.  
High reliability  
.063(1.6)  
MAX  
.161(4.1)  
.146(3.7)  
High surge current capability.  
Epitaxial construction.  
.110(2.8)  
.098(2.5)  
.543(13.8)  
.512(13.2)  
.055(1.4)  
.043(1.1)  
.071(1.8)  
MAX  
.030(0.76)  
.020(0.50)  
.035(0.9)  
.020(0.5)  
Guard-ring for transient protection.  
For use in low voltage, high frequency  
inventor, free wheeling, and polarity  
protection application  
2
.100(2.55)  
PIN 1  
PIN 2  
Case Positive  
.100(2.55)  
CASE  
Mechanical Data  
Cases: ITO-220AC molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Pure tin plated, lead free.  
solderable per MIL-STD-202, Method  
208 guaranteed  
Dimensions in inches and (millimeters)  
Polarity: As marked  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.25”,(6.35mm) from  
case.  
Weight: 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF  
Symbol  
Type Number  
Units  
520 530  
540 550  
560 590 5100 5150  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
90 100 150  
63 70 105  
90 100 150  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
See Fig. 1  
I(AV)  
IFSM  
VF  
5.0  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
120  
Maximum  
Instantaneous Forward Voltage  
0.55  
15  
0.70  
10  
0.85  
0.95  
@ 5.0A  
o
0.5  
0.2  
5.0  
112  
10  
Maximum D.C. Reverse Current @ Tc=25 C  
o
mA  
mA  
IR  
at Rated DC Blocking Voltage @ Tc=125 C  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
Cj  
460  
pF  
o
5.0  
-65 to +150  
-65 to +150  
C/W  
R
θJC  
o
C
T
J
o
TSTG  
C
Notes:  
1. Thermal Resistance from Junction to Case Per Leg  
2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.  
Version: B07  
RATINGS AND CHARACTERISTIC CURVES (SRAF520 THRU SRAF5150)  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
FIG.2- MAXIMUM NON-REPETITIVE FORWARD  
CURVE  
SURGE CURRENT  
5
4
3
2
1
0
300  
8.3ms Single Half Sine Wave  
JEDEC Method  
250  
200  
150  
100  
50  
SRAF520-560  
0
50  
100  
150  
25  
CASE TEMPERATURE. (oC)  
1
2
5
10  
20  
50  
100  
NUMBER OF CYCLES AT 60Hz  
FIG.3- TYPICAL FORWARD CHARACTERISTICS  
50  
10  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
Tj=25oC  
Pulse Width=300  
1% Duty Cycle  
10  
s
1
1.0  
0.1  
SRAF520-560  
SRAF590-5150  
.1  
.2  
.3  
.4  
.5  
.6  
.7  
.8  
.9  
0.1  
FORWARD VOLTAGE. (V)  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
500  
FIG.6- TYPICAL TRANSIENT THERMAL  
CHARACTERISTICS  
Tj=250C  
100  
10  
1
450  
400  
150  
100  
50  
0
.1  
.4  
1.0  
4
10  
REVERSE VOLTAGE. (V)  
40  
100  
0.1  
1
0.01  
0.1  
10  
100  
T, PULSE DURATION. (sec)  
Version: B07  

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