SRAF820_1 [TSC]
Isolated 8.0 AMPS. Schottky Barrier Rectifiers; 分离出8.0安培。肖特基势垒整流器
| 型号： | SRAF820_1 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolated 8.0 AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAF820 - SRAF8150
Isolated 8.0 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.406(10.3)
.390(9.90)
.124(3.16)
.118(3.00)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.5)
.583(14.8)
Features
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Isolated Plastic package.
.063(1.6)
MAX
Low power loss, high efficiency.
High current capability, Low VF.
High reliability
.161(4.1)
.146(3.7)
High surge current capability.
Epitaxial construction.
.110(2.8)
.098(2.5)
.543(13.8)
.512(13.2)
.055(1.4)
.043(1.1)
.071(1.8)
MAX
Guard-ring for transient protection.
For use in low voltage, high frequency
inventor, free wheeling, and polarity
protection application
.030(0.76)
.020(0.50)
.035(0.9)
.020(0.5)
2
.100(2.55)
PIN 1
PIN 2
Case Positive
.100(2.55)
CASE
Mechanical Data
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Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free.
solderable per MIL-STD-202, Method 208
guaranteed
Dimensions in inches and (millimeters)
ꢀ
ꢀ
Polarity: As marked
High temperature soldering guaranteed:
o
260 C/10 seconds/.25”,(6.35mm) from
case.
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Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 Cambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF
Symbol
Type Number
Units
820 830 840 850 860 890 8100 8150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
90 100 150
63 70 105
90 100 150
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
IFSM
VF
8.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
150
Maximum
Instantaneous Forward Voltage
0.55
0.70
0.85
0.95
@8.0A
o
0.5
0.1
5.0
mA
mA
Maximum D.C. Reverse Current @ Tc=25 C
IR
o
15
10
at Rated DC Blocking Voltage @ Tc=100 C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Cj
430
360
pF
o
5.0
C/W
R
θJC
o
T
-65 to +125
-65 to +150
-65 to +150
C
J
o
T
STG
C
Notes:
1. Thermal Resistance from Junction to Case Per Leg with Heat sink (2”x3”x0.25”) Al-Plate.
2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.
Version: B07
RATINGS AND CHARACTERISTIC CURVES (SRAF820 THRU SRAF8150)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
CURVE
SURGE CURRENT
10
8
175
SRAF850-SRAF8150
8.3ms Single Half Sine Wave
JEDEC Method
150
125
100
75
SRAF820-SRAF840
6
4
2
50
25
0
1
2
5
10
20
50
100
0
50
100
150
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
10
50
Tj=25oC
Pulse Width=300
1% Duty Cycle
s
1
10
1.0
0.1
Tj=750C
0.1
0.01
Tj=250C
0.001
0
20
40
60
80
100
120
140
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10
1
4000
2000
Tj=250C
1000
800
600
400
200
100
0.1
0.01
0.1
1
10
100
0.1
0.4
1.0
4
10
40
100
T, PULSE DURATION. (sec)
REVERSE VOLTAGE. (V)
Version: B07
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