SS14 [TSC]
1.0 AMP. Surface Mount Schottky Barrier Rectifiers; 1.0 AMP 。表面贴装肖特基整流器
| 型号： | SS14 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12 - SS115
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
SMA/DO-214AC
Features
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For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
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High temperature soldering:
260oC / 10 seconds at terminals
Mechanical Data
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Case: JEDEC SMA/DO-214AC Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.066 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS SS SS
Type Number
Units
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
19 110 115
90 100 150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
63
70 105
Maximum DC Blocking Voltage
90 100 150
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
1.0
30
A
I(AV)
A
IFSM
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 1.0A @ 25oC
@ 100oC
0.5
0.4
0.75
0.65
0.80
0.70
0.1
2.0
5.0
0.95
0.85
VF
IR
V
Maximum DC Reverse Current @ TA =25 oC at
Rated DC Blocking Voltage @ TA=125 oC
0.4
mA
mA
10
5.0
Maximum DC Reverse Current at VR=33V
& TA=50 oC
Typical Junction Capacitance (Note 3)
-
uA
pF
HTIR
Cj
50
Typical Thermal Resistance ( Note 2 )
R
28
88
oC/W
ΘJL
R
θJA
TJ
Operating Temperature Range
Storage Temperature Range
-65 to +125
-65 to +150
-65 to +150
oC
oC
TSTG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version: C07
RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1.0
0.5
0
50
40
RESISTIVE OR
INDUCTIVE LOAD
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
SS12- SS14
SS15-SS115
30
20
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
1
10
NUMBER OF CYCLES AT 60Hz
100
50
60
70
80
90 100 110 120 130 140 150 160 170
LEAD TEMPERATURE. (oC)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
SS19-SS110
100
50
10
SS12-SS14
SS15-SS115
SS15-SS16
SS12-SS14
10
Tj=1250C
1
1
SS115
Tj=750C
0.1
0.01
0.1
Tj=25OC
PULSE WIDTH=300
1% DUTY CYCLE
S
0.001
0.01
0
20
40
60
80
100
120
140
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10
1
400
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
SS12-SS14
SS15-SS16
SS19-SS115
10
0.1
0.1
1.0
10
100
1
0.01
0.1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
Version: C07
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