SS25 [TSC]
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers; 2.0安培。表面贴装肖特基整流器
| 型号： | SS25 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS22 - SS215
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
Features
ꢀ
For surface mounted application
Easy pick and place
.187(4.75)
.167(4.25)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
.012(.31)
.006(.15)
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
ꢀ
ꢀ
.209(5.30)
.201(5.10)
High temperature soldering:
o
260 C / 10 seconds at terminals
Mechanical Data
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Molded plastic
Dimensions in inches and (millimeters)
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS SS SS
Type Number
Units
22
20
14
20
23
30
21
30
24
40
28
40
25
50
35
50
26
60
42
60
29 210 215
90 100 150
63 70 105
90 100 150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
2.0
50
A
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
Maximum Instantaneous Forward Voltage
o
0.5
0.4
0.70
0.65
0.85
0.70
0.1
0.95
0.80
(Note 1)
IF= 2.0A @ 25 C
o
V
VF
@ 100 C
o
0.4
Maximum DC Reverse Current @ T =25 C at
A
mA
mA
IR
o
Rated DC Blocking Voltage @ T =125 C
A
10
5.0
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Cj
130
pF
R
17
75
o
θJL
C/W
R
θJA
o
Operating Temperature Range
Storage Temperature Range
TJ
-65 to +125
-65 to +150
-65 to +150
C
o
TSTG
C
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version: B07
RATINGSAND CHARACTERISTIC CURVES (SS22 THRU SS215)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
2.0
1.5
1.0
0.5
0
50
40
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
JEDEC Method
AT RATED TL
SS25-SS215
SS22-SS24
30
20
10
0
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. (OC)
FIG.4-TYPICALREVERSE CHARACTERISTICS
FIG.3- TYPICAL FORWARD CHARACTERISTICS
TJ=25OC
100
SS22-SS24
SS25-SS215
50
10
TJ=125O
C
10
SS25-SS26
1
SS22-SS24
TJ=75O
C
1
SS29-SS210
0.1
0.1
SS215
0.01
TJ=25OC
PULSE WIDTH=300
1% DUTY CYCLE
S
0.001
0
20
40
60
80
100
120
140
0.01
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
10
1
400
100
Tj=25O
f=1.0MHz
Vsig=50mVp-p
C
SS29-SS215
SS22-SS24
SS25-SS26
10
0.1
1
0.1
10
100
1
0.01
0.1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
Version: B07
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