TS13003BCT [TSC]

High Voltage NPN Transistor; 高压NPN晶体管
TS13003BCT
型号: TS13003BCT
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

High Voltage NPN Transistor
高压NPN晶体管

晶体 晶体管 高压
文件: 总6页 (文件大小:324K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TS13003B  
High Voltage NPN Transistor  
TO-92  
Pin Definition:  
1. Emitter  
PRODUCT SUMMARY  
2. Collector  
3. Base  
BVCEO  
BVCBO  
IC  
400V  
700V  
1.5A  
VCE(SAT)  
0.8V @ IC / IB = 0.5A / 0.1A  
Features  
Block Diagram  
High Voltage  
High Speed Switching  
Structure  
Silicon Triple Diffused Type  
NPN Silicon Transistor  
Ordering Information  
Part No.  
Package  
Packing  
1Kpcs / Bulk  
1Kpcs / Bulk  
2Kpcs / Ammo  
2Kpcs / Ammo  
TS13003BCT B0  
TS13003BCT B0G  
TS13003BCT A3  
TS13003BCT A3G  
TO-92  
TO-92  
TO-92  
TO-92  
Note: “G” denote for Green Product  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
700V  
V
V
V
400V  
9
DC  
1.5  
Collector Current  
IC  
A
Pulse  
3
1.5  
Collector Power Dissipation  
PD  
TJ  
W
oC  
oC  
Operating Junction Temperature  
+150  
Operating Junction and Storage Temperature Range  
TSTG  
- 55 to +150  
Thermal Performance  
Parameter  
Symbol  
Limit  
Unit  
oC/W  
Junction to Ambient Thermal Resistance  
RӨJA  
121.4  
1/6  
Version: C07  
TS13003B  
High Voltage NPN Transistor  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Collector-Base Voltage  
IC = 1mA, IB = 0  
BVCBO  
BVCEO  
BVEBO  
ICEO  
700  
400  
9
--  
--  
--  
--  
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Cutoff Current  
Collector-Emitter Cutoff Current @45oC  
Collector Cutoff Current  
Collector Cutoff Current @45oC  
Emitter Cutoff Current  
IC = 10mA, IE = 0  
IE = 1mA, IC = 0  
V
--  
--  
V
VCE = 400V, IB = 0  
VCE = 400V, IB = 0  
VCB = 700V, IE = 0  
VCB = 700V, IE = 0  
VEB = 9V, IC = 0  
--  
--  
1
uA  
uA  
uA  
uA  
uA  
ICEO  
--  
0.5  
--  
--  
ICBO  
--  
1
ICBO  
--  
0.2  
0.1  
0.2  
0.3  
0.5  
--  
--  
IEBO  
--  
1
IC / IB = 0.5A / 0.1A  
IC / IB = 1.0A / 0.25A  
IC / IB = 1.5A / 0.5A  
IC / IB = 0.5A / 0.1A  
IC / IB = 1.0A / 0.25A  
VCE = 2V, IC = 10mA  
VCE = 2V, IC = 400mA  
VCE = 2V, IC = 1A  
VCE(SAT)1  
VCE(SAT)2  
VCE(SAT)3  
VBE(SAT)1  
VBE(SAT)2  
hFE1  
--  
0.5  
1
Collector-Emitter Saturation Voltage*  
Base-Emitter Saturation Voltage*  
DC Current Gain*  
V
V
--  
--  
3
--  
1.1  
1.3  
40  
40  
40  
--  
--  
6
--  
hFE2  
23  
8
--  
hFE3  
--  
Dynamic  
Frequency  
VCE = 10V, IC = 0.1A  
fT  
4
--  
--  
--  
MHz  
pF  
Output Capacitance  
VCB = 10V, f = 0.1MHz  
Cob  
--  
21  
Resistive Load Switching Time (Ratings)  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
VCC = 125V, IC = 1A,  
IB1 = IB2 = 0.2A,  
tp = 25uS  
td  
tr  
--  
--  
--  
--  
0.05  
0.6  
2
0.2  
1
uS  
uS  
uS  
uS  
tSTG  
tf  
4
Duty Cycle 1%  
0.2  
0.7  
* Note: pulse test: pulse width 300uS, duty cycle 2%  
2/6  
Version: C07  
TS13003B  
High Voltage NPN Transistor  
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)  
Figure 1. Static Characteristics  
Figure 2. DC Current Gain  
Figure 3. VCE(SAT) v.s. VBE(SAT  
Figure 4. Power Derating  
Figure 5. Reverse Bias SOA  
Figure 6. Safety Operating Area  
3/6  
Version: C07  
TS13003B  
High Voltage NPN Transistor  
TO-92 Mechanical Drawing  
TO-92 DIMENSION  
MILLIMETERS INCHES  
DIM  
MIN  
4.30  
4.30  
MAX  
4.70  
4.70  
MIN  
MAX  
0.185  
0.185  
A
B
C
D
E
F
0.169  
0.169  
14.30(typ)  
0.563(typ)  
0.43  
2.19  
3.30  
2.42  
0.37  
0.49  
2.81  
3.70  
2.66  
0.43  
0.017  
0.086  
0.130  
0.095  
0.015  
0.019  
0.111  
0.146  
0.105  
0.017  
G
H
Marking Diagram  
Y = Year Code  
M = Month Code  
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,  
J=Oct, K=Nov, L=Dec)  
L = Lot Code  
4/6  
Version: C07  
TS13003B  
High Voltage NPN Transistor  
TO-92 Ammo Pack Specification  
Ammo Pack  
1.1. Ammo pack in box.  
1.2. Qty / Box: 2,000pcs  
1.3. Peel Strength: must be 13grams (minimum).  
1.4. Part Orientation: Marking on flat side  
Tape Dimension  
A1  
A
T
P
P0  
P2  
F
W
W0  
4.6±0.2  
4.5±0.3  
3.6±0.3  
12.7±1  
12.7±0.3  
6.25±0.4  
6.02±0.6  
18.0±0.5  
6.0±0.2  
W1  
W2  
H0  
H1  
L
D0  
t
F1, F2  
H2  
9.0±0.7  
0.5±0.2  
16±0.5  
23 (typ)  
11  
4.0±0.2  
0.86±0.3  
2.50±0.3  
3.0 (typ)  
unit: mm  
5/6  
Version: C07  
TS13003B  
High Voltage NPN Transistor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to any  
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for  
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale  
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,  
or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers  
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for  
any damages resulting from such improper use or sale.  
6/6  
Version: C07  

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