TSB1424CYRMG [TSC]

Low Vcesat PNP Transistor; 低VCESAT PNP晶体管
TSB1424CYRMG
型号: TSB1424CYRMG
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Low Vcesat PNP Transistor
低VCESAT PNP晶体管

晶体 晶体管
文件: 总5页 (文件大小:134K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSB1424  
Low Vcesat PNP Transistor  
SOT-89  
SOT-23  
Pin Definition:  
1. Base  
2. Collector  
3. Emitter  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
-20V  
-20V  
-3A  
VCE(SAT)  
-0.2V @ IC / IB = -2A / -100mA  
Features  
Ordering Information  
Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.)  
Complementary part with TSD2150  
Part No.  
Package  
Packing  
TSB1424CY RM  
TSB1424CY RMG  
TSB1424CX RF  
TSB1424CX RFG  
SOT-89  
SOT-89  
SOT-23  
SOT-23  
1Kpcs / 7” Reel  
1Kpcs / 7” Reel  
3Kpcs / 7” Reel  
3Kpcs / 7” Reel  
Structure  
Epitaxial Planar Type  
PNP Silicon Transistor  
Note: “G” denote for Halogen Free Product  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Limit  
Parameter  
Symbol  
Unit  
SOT-89  
SOT-23  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
-20  
-20  
-6  
V
V
V
DC  
-3  
Collector Current  
IC  
A
Pulse  
-5 (note1)  
0.6  
2 (note 2)  
+150  
- 55 to +150  
0.3  
Collector Power Dissipation  
PD  
W
1 (note 2)  
Operating Junction Temperature  
TJ  
oC  
oC  
Operating Junction and Storage Temperature Range  
Note: 1. Single pulse, Pw=10ms, Duty50%  
TSTG  
2. When mounted on a 40 x 50 x 0.7mm ceramic board.  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Collector-Base Breakdown Voltage  
Conditions  
IC = -50uA, IE = 0  
Symbol  
Min  
Typ  
--  
Max  
--  
Unit  
V
BVCBO  
BVCEO  
BVEBO  
ICBO  
-20  
-20  
-6  
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0  
--  
--  
V
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = -50uA, IC = 0  
VCB = -20V, IE = 0  
VEB = -5V, IC = 0  
IC / IB = -2A / -100mA  
VCE = -2V, IC = 100mA  
VCE =-2V, IE=0.5A,  
f=100MHz  
--  
--  
V
--  
--  
-0.1  
-0.1  
-0.5  
390  
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
VCE(SAT)  
hFE  
--  
-0.2  
--  
180  
Transition Frequency  
Output Capacitance  
fT  
--  
--  
200  
28  
--  
--  
MHz  
pF  
V
CB = -10V, IE = 0,  
Cob  
f=1MHz  
1/5  
Version: E11  
TSB1424  
Low Vcesat PNP Transistor  
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)  
Figure 1. DC Current Gain  
Figure 2. VCE(SAT) v.s. Ic  
Figure 3. VBE(SAT) v.s. Ic  
Figure 4. Transition Frequency v.s. IE  
Figure 5. Collector Output Capacitance vs. Vcb  
Figure 6. Collector Input Capacitance vs. Veb  
2/5  
Version: E11  
TSB1424  
Low Vcesat PNP Transistor  
SOT-89 Mechanical Drawing  
SOT-89 DIMENSION  
MILLIMETERS INCHES  
MIN  
DIM  
MIN  
4.40  
1.50  
2.30  
0.40  
1.50  
3.00  
0.89  
4.05  
1.4  
MAX  
4.60  
1.7  
MAX  
0.181  
0.070  
0.102  
0.020  
0.059  
0.118  
0.047  
0.167  
0.068  
0.017  
A
B
C
D
E
F
G
H
I
0.173  
0.059  
0.090  
0.016  
0.059  
0.118  
0.035  
0.159  
0.055  
0.014  
2.60  
0.52  
1.50  
3.00  
1.20  
4.25  
1.6  
J
0.35  
0.44  
Marking Diagram  
Y
= Year Code  
M = Month Code  
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,  
I=Sep, J=Oct, K=Nov, L=Dec)  
= Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,  
W=Sep, X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
3/5  
Version: E11  
TSB1424  
Low Vcesat PNP Transistor  
SOT-23 Mechanical Drawing  
SOT-23 DIMENSION  
MILLIMETERS  
MIN MAX  
0.95 BSC  
1.9 BSC  
2.60  
INCHES  
MIN MAX.  
0.037 BSC  
0.074 BSC  
DIM  
A
A1  
B
C
D
E
F
G
H
I
3.00  
1.70  
3.10  
1.30  
0.10  
0.50  
0.20  
0.60  
10º  
0.102  
0.118  
0.067  
0.122  
0.051  
0.004  
0.020  
0.008  
0.024  
10º  
1.40  
2.80  
1.00  
0.00  
0.35  
0.10  
0.30  
5º  
0.055  
0.110  
0.039  
0.000  
0.014  
0.004  
0.012  
5º  
J
Marking Diagram  
Y
= Year Code  
M = Month Code  
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,  
I=Sep, J=Oct, K=Nov, L=Dec)  
= Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,  
W=Sep, X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
4/5  
Version: E11  
TSB1424  
Low Vcesat PNP Transistor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
5/5  
Version: E11  

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