TSB1664CYP

更新时间:2024-09-18 01:56:53
品牌:TSC
描述:Low Frequency NPN Transistor

TSB1664CYP 概述

Low Frequency NPN Transistor 低频NPN晶体管 其他晶体管

TSB1664CYP 规格参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.59
Is Samacsys:NBase Number Matches:1

TSB1664CYP 数据手册

通过下载TSB1664CYP数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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TSD1664  
Low Frequency NPN Transistor  
BVCEO = 20V  
Ic = 800mA  
Pin assignment:  
1. Base  
VCE (SAT), = 0.15V(typ.) @Ic / Ib = 400mA / 20mA  
2. Collector  
3. Emitter  
Features  
Ordering Information  
—
Low VCE (SAT).  
Part No.  
Packing  
Package  
—
Excellent DC current gain characteristics  
TSB1664CY  
Tape & Reel  
SOT-89  
Structure  
—
Epitaxial planar type.  
—
NPN silicon transistor  
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)  
Parameter Symbol  
Limit  
40V  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
A
20V  
5
DC  
0.8  
Pulse  
SOT-89  
1.5 (note 1)  
0.5  
Collector Power Dissipation  
PD  
W
2 (note 2)  
+150  
Operating Junction Temperature  
TJ  
oC  
oC  
Operating Junction and Storage Temperature Range  
TSTG  
- 55 to +150  
Note: 1. Single pulse, Pw = 20mS, Duty <= 50%  
2. When mounted on a 40 x 40 x 0.7mm ceramic board  
Electrical Characteristics  
Ta = 25 oC unless otherwise noted  
Parameter  
Conditions  
IC = 10uA, IE = 0  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Collector-Base Voltage  
BVCBO  
BVCEO  
BVEBO  
ICBO  
40  
20  
5
V
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IC = 1mA, IB = 0  
IE = 10uA, IC = 0  
V
VCB = 20V, IE = 0  
0.5  
0.5  
0.3  
0.5  
560  
uA  
uA  
V
Emitter Cutoff Current  
VEB = 4V, IC = 0  
IEBO  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
IC / IB = 400mA / 20mA  
IC / IB = 800mA / 80mA  
VCE = 2V, IC = 0.1A  
VCE =5V, IC=50mA, f=100MHz  
VCB = 10V, f=1MHz  
VCE(SAT)1  
VCE(SAT)2  
hFE  
0.15  
0.25  
V
82  
fT  
150  
20  
MHz  
pF  
Output Capacitance  
Cob  
30  
Note : pulse test: pulse width <=380uS, duty cycle <=2%  
Classification Of hFE  
Rank  
P
Q
R
S
Range  
82 - 180  
120 - 270  
180 - 390  
270 - 560  
TSB1664  
1-3  
2003/12 rev. A  
Electrical Characteristics Curve  
TSB1664  
2-3  
2003/12 rev. A  
SOT-89 Mechanical Drawing  
A
B
SOT-89 DIMENSION  
MILLIMETERS  
INCHES  
MIN  
I
DIM  
MIN  
4.40  
1.50  
2.30  
0.40  
1.50  
3.00  
0.89  
4.05  
1.4  
MAX  
4.60  
1.7  
MAX  
0.181  
0.070  
0.102  
0.020  
0.059  
0.118  
0.047  
0.167  
0.068  
0.017  
A
B
C
D
E
F
G
H
I
0.173  
0.059  
0.090  
0.016  
0.059  
0.118  
0.035  
0.159  
0.055  
0.014  
2.60  
0.52  
1.50  
3.00  
1.20  
4.25  
1.6  
C
H
G
E
D
J
J
0.35  
0.44  
F
TSB1664  
3-3  
2003/12 rev. A  

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