TSC136L [TSC]

High Voltage NPN Transistor; 高压NPN晶体管


型号：	TSC136L
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	High Voltage NPN Transistor 高压NPN晶体管晶体晶体管高压
文件：	总6页 (文件大小：429K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TSC136L

High Voltage NPN Transistor

TO-251

(IPAK)

TO-252

(DPAK)

Pin Definition:

1. Base

PRODUCT SUMMARY

BV_CEO

BV_CBO

I_C

400V

2. Collector

3. Emitter

700V

V_CE(SAT)

0.6V @ I_C/ I_B= 1.5A / 0.5A

Features

Block Diagram

●

High Voltage

●

High Speed Switching

Structure

●

Silicon Triple Diffused Type

NPN Silicon Transistor

Ordering Information

Part No.

Package

Packing

TSC136LCP RO

TSC136LCP ROG

TSC136LCH C5

TSC136LCH C5G

TO-252

TO-251

2.5Kpcs / 13” Reel

70pcs / Tube

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Total Dissipation @ T_C≤ 25^oC

Collector Peak Current (tp <5ms)

Collector Current

V_CBO

V_CEO

V_EBO

P_TOT

I_CM

700

400ꢀ

I_C

Base Peak Current (tp <5ms)

Base Current

I_BM

I_B

1.5

Maximum Operating Junction Temperature

Storage Temperature Range

T_J

+150

-65 to +150

^oC

T_STG

Thermal Performance

Parameter

Symbol

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

RӨ_JC

2.08

1/6

Version: B09

TSC136L

High Voltage NPN Transistor

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

I_C= 10mA, I_B= 0

I_C= 10mA, I_E= 0

I_E= 1mA, I_C= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

700

400

Collector-Emitter Breakdown Voltage^a

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

V_CB= 700V, I_E= 0

V_CE= 400V, I_B= 0

I_C=0.5A, I_B=0.1A

I_C=1A, I_B=0.25A

I_C=1.5A, I_B=0.5A

I_C=0.5A, I_B=0.1A

V_CE=10V, I_C=500mA

V_CE=5V, I_C=2A

100

0.4

0.5

0.6

1.2

I_EBO

V_CE(SAT)1

V_CE(SAT)2

V_CE(SAT)3

V_BE(SAT)

Collector-Emitter Saturation Voltage^a

Base-Emitter Saturation Voltage^a

DC Current Gain

h_FE

f_T

Frequency

V_CE= 10V, I_C= 0.5A

V_CB= 10V, f = 0.1MHz

V_CC= 125V, I_C= 1A,

I_B1= 0.2A.

MHz

Output Capacitance

Turn On Time

Storage Time

Cob

t_ON

t_STG

t_f

0.4

2.0

0.16

Fall Time

Notes:

a. Pulsed duration = 300uS, duty cycle ≤1.5%

2/6

Version: B09

TSC136L

High Voltage NPN Transistor

Electrical Characteristics Curve (Ta = 25^oC, unless otherwise noted)

Figure 1. Static Characteristics

Figure 2. DC Current Gain

Figure 3. Vce(sat) v.s. Vbe(sat)

Figure 4. Power Derating

ꢀ

3/6

Version: B09

TSC136L

High Voltage NPN Transistor

SOT-252 Mechanical Drawing

TO-252 DIMENSION

MILLIMETERS INCHES

MIN MAX MIN MAX

2.3BSC

4.6BSC

6.80

DIM

0.09BSC

0.18BSC

7.20

5.60

6.65

2.40

0.20

5.40

0.85

0.65

1.50

2.80

1.10

1.50

1.70

0.268

0.283

0.220

0.262

0.094

0.008

0.213

0.033

0.026

0.059

0.110

0.043

0.059

0.67

5.40

6.40

2.20

0.00

5.20

0.75

0.55

0.35

0.90

2.20

0.50

0.90

1.30

0.213

0.252

0.087

0.000

0.205

0.030

0.022

0.014

0.035

0.087

0.020

0.035

0.051

Marking Diagram

= Year Code

= Month Code

(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,

I=Sep, J=Oct, K=Nov, L=Dec)

= Month Code for Halogen Free Product

(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,

X=Oct, Y=Nov, Z=Dec)

= Lot Code

4/6

Version: B09

TSC136L

High Voltage NPN Transistor

SOT-251 Mechanical Drawing

TO-251 DIMENSION

MILLIMETERS INCHES

MIN

DIM

MIN

2.19

0.89

0.64

0.76

5.21

0.46

5.97

6.35

MAX

2.38

1.14

0.89

1.14

5.46

0.58

6.10

6.73

MAX

0.094

0.045

0.035

0.045

0.215

0.023

0.240

0.265

0.086

0.035

0.025

0.030

0.205

0.018

0.235

0.250

2.28 BSC.

0.90 BSC.

8.89

1.91

0.89

1.15

9.65

2.28

1.27ꢀ

1.52

0.350

0.075

0.035

0.045

0.380

0.090

0.050

0.060

Marking Diagram

ꢀ

= Year Code

= Month Code

(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,

I=Sep, J=Oct, K=Nov, L=Dec)

= Month Code for Halogen Free Product

(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,

X=Oct, Y=Nov, Z=Dec)

= Lot Code

5/6

Version: B09

TSC136L

High Voltage NPN Transistor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to any

intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for

such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale

and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,

or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers

using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for

any damages resulting from such improper use or sale.ꢀ

6/6

Version: B09

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