TSCD114D [TSC]
NPN Digital Transistor; NPN数字晶体管
| 型号： | TSCD114D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | NPN Digital Transistor |
| 文件： | 总4页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSCD114D
NPN Digital Transistor
Pin assignment:
1. TR1 Gnd (Emitter)
2. TR1 Input (Base)
3. TR2 Output (Collector)
4. TR2 Gnd (Emitter)
5. TR2 Input (Base)
6. TR1 Output (Collector)
Vcc = 50V
Vin = - 6V ~ +40V
Io = 70mA(max.)
Features
Equivalent Circuit
Build-in bias resistor enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. The also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation,
making device design easy.
Two TSC114D chips in a SOT-363 package
Transistor elements are independent, eliminating
interference
Complements the TSAD114D
Ordering Information
Part No.
Packing
Tape & Reel
Package
TSCD114DCU6
SOT-363
Note: the build-in resistor value type, option as
No.
TR 1
TR 2
Re (KΩ)
10
R (KΩ) Marking
47
47
7D
10
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
50
Unit
V
Supply Voltage
Input Voltage
Output Current
Vcc
Vin
Io
- 6 ~ +40
70
V
DC
mA
Pulse
100
Power Dissipation (note)
PD
TJ
200
mW
oC
Operating Junction Temperature
+150
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
2. 150mW per element must not be exceeded.
TSCD114D
1-4
2003/12 rev. A
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Vcc= 5V, Io= 100uA
Vo= 0.3V, Io= 1mA
Io/Iin= 5mA/ 0.25mA
Vin= 5V
Symbol
Vin(off)
Vin(on)
Vo(on)
Iin
Min
--
Typ
--
Max
0.3
--
Unit
V
Input Voltage
3
--
V
Output Voltage
Input Current
--
0.1
--
0.3
0.88
0.5
--
V
--
mA
uA
Output Current
Vcc= 50V, Vin= 0V
Vo= 5V, Io= 5mA
Io(off)
Gi
--
--
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
68
|0.7|
|0.8|
--
--
R1
10
4.7
250
|1.3|
|1.2|
--
KΩ
R2/R1
ft
Vce= 10V, Ie= 5mA,
f= 100MHz (note 1)
MHz
Note : 1. Transition frequency of the device.
2. Pulse test: pulse width <=380uS, duty cycle <=2%
TSCD114D
2-4
2003/12 rev. A
Electrical Characteristics Curve
TSCD114D
3-4
2003/12 rev. A
SOT-363 Mechanical Drawing
SOT-363 DIMENSION
MILLIMETERS INCHES
MIN
DIM
MIN
0.80
--
MAX
1.10
0.10
0.30
0.25
2.20
1.35
MAX
0.043
0.004
0.012
0.010
0.087
0.053
A
A1
bp
C
0.031
--
0.10
0.10
1.80
1.15
0.004
0.004
0.071
0.045
D
E
e
1.30 (typ)
0.65 (typ)
0.052 (typ)
0.026(typ)
e1
He
Lp
Q
2.00
0.10
2.20
0.3
0.079
0.004
0.087
0.012
0.20 (typ)
0.008 (typ)
W
Θ
0.20 (typ)
10o (typ)
0.008 (typ)
10o (typ)
TSCD114D
4-4
2003/12 rev. A
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