TSD2098A [TSC]
Low Vcesat NPN Transistor; 低VCESAT NPN晶体管
| 型号： | TSD2098A |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Low Vcesat NPN Transistor |
| 文件： | 总4页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSD2098A
Low Vcesat NPN Transistor
SOT-89
Pin Definition:
1. Base
PRODUCT SUMMARY
BVCBO
BVCEO
IC
100V
2. Collector
3. Emitter
20V
5A
VCE(SAT)
0.35V @ IC / IB = 3A / 100mA
Features
Ordering Information
●
●
Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.)
Excellent DC current gain characteristics
Part No.
Package
SOT-89
Packing
TSD2098ACY RM
1Kpcs / 7” Reel
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCES
VCEO
VEBO
95
V
20
V
6
5
V
DC
Collector Current
IC
A
Pulse
8 (note1)
0.6
Collector Power Dissipation
PD
1 (note 2)
2 (note 3)
+150
W
Operating Junction Temperature
TJ
oC
oC
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS
TSTG
- 55 to +150
2. Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm x 10mm.
3. When mounted on a 40 x 40 x 0.7mm ceramic board
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Conditions
IC = 50uA, IE = 0
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
Min
100
95
20
6
Typ
--
Max
--
Unit
V
Collector-Emitter Breakdown Voltage IC = 50uA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
--
--
V
--
--
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 50uA, IC = 0
--
--
V
VCB = 50V, IE = 0
VEB = 5V, IC = 0
--
0.35
--
0.5
0.5
1.0
1.0
--
uA
uA
Emitter Cutoff Current
IEBO
--
IC = 3A, IB = 100mA
IC = 3A, IB = 60mA
VCE = 2V, IC = 20mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 2A
VCE =6V, IC=50mA,
f=100MHz
VCE(SAT)
VCE(SAT)
hFE
--
0.35
--
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
V
--
230
260
150
--
hFE
--
780
--
hFE
--
Transition Frequency
Output Capacitance
fT
--
--
150
30
--
MHz
pF
VCB = 20V, f=1MHz
Cob
50
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
1/4
Version: A07
TSD2098A
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: A07
TSD2098A
Low Vcesat NPN Transistor
SOT-89 Mechanical Drawing
SOT-89 DIMENSION
MILLIMETERS INCHES
MIN
DIM
MIN
4.40
1.50
2.30
0.40
1.50
3.00
0.89
4.05
1.4
MAX
4.60
1.7
MAX
0.181
0.070
0.102
0.020
0.059
0.118
0.047
0.167
0.068
0.017
A
B
C
D
E
F
G
H
I
0.173
0.059
0.090
0.016
0.059
0.118
0.035
0.159
0.055
0.014
2.60
0.52
1.50
3.00
1.20
4.25
1.6
J
0.35
0.44
3/4
Version: A07
TSD2098A
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A07
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