TSD30H100CW [TSC]
Trench Schottky Rectifier;
| 型号： | TSD30H100CW |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Trench Schottky Rectifier |
| 文件： | 总5页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
2
- Low power loss/ High efficiency
- High forward surge capability
1
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
3
TO-263AB (D2PAK)
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-263AB (D2PAK)
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSD30H
100CW
100
TSD30H
120CW
120
TSD30H
150CW
150
TSD30H
200CW
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
30
15
Maximum average
IF(AV)
forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP
MAX
0.78
0.68
250
35
TYP
MAX
TYP
MAX
0.90
0.77
150
20
TYP
MAX
0.92
0.79
150
20
TJ = 25°C
0.69
0.61
-
0.75
0.64
-
0.84
0.73
250
35
0.81
0.68
-
0.84
0.70
-
Instantaneous forward
voltage per diode (Note1)
IF = 15A
VF
IR
V
TJ = 125°C
TJ = 25°C
TJ = 125°C
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
10
10
3
3
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
2.8
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D1411019
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
ORDER INFORMATION (EXAMPLE)
TSD30H100CW C0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
FIG. 1 FORWARD CURRENT DERATING CURVE
100
10
35
TSD30H100CW
TSD30H100CW
TSD30H120CW
30
TJ=150oC
25
TSD30H150CW
TSD30H200CW
20
TJ=125oC
1
15
TJ=100oC
10
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
0.1
0.01
TJ=25oC
5
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
CASE TEMPERATURE (oC)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
10
100
TSD30H120CW
TSD30H150CW
TJ=150oC
TJ=125oC
10
1
TJ=150oC
TJ=125oC
1
TJ=100oC
TJ=25oC
TJ=100oC
TJ=25oC
0.1
0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
Document Number: DS_D1411019
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
10
100
10
TSD30H100CW
TSD30H200CW
TJ=150oC
TJ=125oC
TJ=150oC
1
TJ=100oC
0.1
TJ=125oC
1
0.01
TJ=100oC
TJ=25oC
0.001
0.0001
0.00001
TJ=25oC
0.1
0.01
10
20
30
40
50
60
70
80
90
100
0
0.2
0.4
0.6
0.8
1
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100
100
10
TSD30H120CW
TSD30H150CW
10
1
TJ=150oC
TJ=125oC
TJ=150oC
TJ=125oC
1
0.1
TJ=100oC
0.1
TJ=100oC
0.01
0.01
0.001
0.0001
0.00001
0.001
0.0001
0.00001
TJ=25oC
TJ=25oC
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 10 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100
10
10000
1000
100
TSD30H200CW
TSD30H100CW
Vsig=50mVp-p
1
TJ=150oC
TJ=125oC
TSD30H120CW
0.1
TJ=100oC
0.01
TSD30H200CW
0.001
0.0001
0.00001
TSD30H150CW
TJ=25oC
10
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
REVERSE VOLTAGE (V)
Document Number: DS_D1411019
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-263AB (D2PAK)
Unit (mm)
Min Max
Unit (inch)
DIM.
Min
Max
0.396
0.611
A
B
C
D
E
F
G
H
I
9.600 10.050 0.378
14.920 15.520 0.587
2.540 (TYP)
0.675 0.975
1.778 (TYP)
0.100 (TYP)
0.027
0.038
0.070 (TYP)
4.390
4.790
1.450
0.173
0.045
0.189
0.057
1.150
1.600 (TYP)
0.063 (TYP)
9.170
0.400
9.370
0.600
0.361
0.016
0.369
0.024
J
0.254 (TYP)
0.010 (TYP)
K
L
1.150
1.550
0.045
0.061
MARKING DIAGRAM
P/N
G
= Specific Device Code
= Green Compound
= Date Code
YWW
F
= Factory Code
Document Number: DS_D1411019
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
Document Number: DS_D1411019
Version: B15
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