TSM045NA03CR [TSC]
N-Channel Power MOSFET;
| 型号： | TSM045NA03CR |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM045NA03CR
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 108A, 4.5mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
PARAMETER
VALUE
UNIT
● Low gate charge for fast power switching
VDS
30
4.5
6.3
9
V
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
VGS = 10V
VGS = 4.5V
RDS(on)
(max)
mΩ
● Halogen-free according to IEC 61249-2-21
Qg
nC
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● ORing FET/Load Switching
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
UNIT
Drain-Source Voltage
30
±20
108
18
V
Gate-Source Voltage
VGS
V
TC = 25°C
TA = 25°C
Continuous Drain Current (Note 1)
Pulsed Drain Current
ID
A
A
IDM
432
Single Pulse Avalanche Current (Note 2)
Single Pulse Avalanche Energy (Note 2)
IAS
26
A
EAS
104
mJ
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
89
17.8
Total Power Dissipation
Total Power Dissipation
PD
W
2.6
PD
W
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
LIMIT
1.4
UNIT
°C/W
°C/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
48
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = 30V
BVDSS
VGS(TH)
IGSS
30
1.2
--
--
2
--
2.5
±100
1
V
V
--
--
nA
--
Drain-Source Leakage Current
IDSS
µA
VGS = 0V, VDS = 30V
TJ = 125°C
--
--
100
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 18A
VDS = 5V, ID = 18A
--
--
--
3.6
5.5
47
4.5
6.3
--
Drain-Source On-State Resistance
RDS(on)
gfs
mΩ
(Note 3)
Forward Transconductance (Note 3)
S
Dynamic (Note 4)
VGS = 10V, VDS = 15V,
ID = 18A
Total Gate Charge
Qg
--
19
--
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
9
4
--
--
nC
VGS = 4.5V, VDS = 15V,
ID = 18A
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
--
3.7
1194
421
97
--
--
--
VGS = 0V, VDS = 15V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
--
--
pF
--
--
f = 1.0MHz
0.4
1.2
2.4
Ω
Switching (Note 4)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
5.4
2.2
12.6
2
--
--
--
--
VGS = 10V, VDS = 15V,
ns
ID = 18A, RG = 2Ω,
Source-Drain Diode
Forward Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
--
--
--
--
1.2
--
V
VGS = 0V, IS = 18A
23
17
ns
nC
IS = 18A ,
Qrr
--
dI/dt = 100A/μs
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDD = 50V, RG = 25Ω, IAS = 26A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM045NA03CR RLG
PDFN56
2,500pcs / 13” Reel
2
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
VGS=3.5V
32
24
16
8
25℃
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=4V
150℃
-55℃
VGS=3V
0
0
0
1
2
3
4
0
1
2
3
4
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
0.01
0.008
0.006
0.004
0.002
0
10
8
VDS=15V
ID=18A
VGS=4.5V
6
4
VGS=10V
2
0
0
8
16
24
32
40
0
4
8
12
16
20
Qg, Gate Charge (nC)
ID, Drain Current (A)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
1.8
0.02
0.016
0.012
0.008
0.004
0
VGS=10V
ID=18A
1.6
1.4
1.2
1
ID=18A
0.8
0.6
-75 -50 -25
0
25
50
75 100 125 150
3
4
5
6
7
8
9
10
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage (V)
3
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
1.2
1.1
1
1400
CISS
1200
ID=1mA
1000
800
600
400
0.9
0.8
COSS
200
CRSS
0
-75 -50 -25
0
25 50 75 100 125 150
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
100
1000
RDS(ON)
10
100
100us
-55℃
25℃
150℃
1
10
1ms
SINGLE PULSE
RӨJC=1.4°C/W
TC=25°C
10ms
DC
0.1
1
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
100
VDS, Drain to Source Voltage (V)
VSD, Body Diode Forward Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
SINGLE PULSE
RӨJC=1.4°C/W
1
0.1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t1 / t2
TJ = TC + PDM x ZӨJC x RӨJC
0.01
0.0001
0.001
0.01
0.1
t, Square Wave Pulse Duration (sec)
4
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
G
Y
= Halogen Free
= Year Code
TSC
045NA03
GYWWF
WW = Week Code (01~52)
= Factory Code
F
5
Version: B1610
TSM045NA03CR
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: B1610
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