TSM2311_07 [TSC]

20V P-Channel MOSFET; 20V P沟道MOSFET
TSM2311_07
型号: TSM2311_07
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

20V P-Channel MOSFET
20V P沟道MOSFET

文件: 总6页 (文件大小:360K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSM2311  
20V P-Channel MOSFET  
PRODUCT SUMMARY  
SOT-23  
Pin Definition:  
1. Gate  
2. Source  
3. Drain  
VDS (V)  
RDS(on)(mΩ)  
55 @ VGS = -4.5V  
85 @ VGS = -2.5V  
ID (A)  
-4.0  
-20  
-2.5  
Features  
Block Diagram  
Advance Trench Process Technology  
High Density Cell Design for Ultra Low On-resistance  
Application  
Load Switch  
PA Switch  
P-Channel MOSFET  
Ordering Information  
Part No.  
Package  
SOT-23  
Packing  
TSM2311CX RF  
3Kpcs / 7” Reel  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
-20  
Unit  
V
Drain-Source Voltage  
VDS  
VGS  
ID  
Gate-Source Voltage  
±8  
V
Continuous Drain Current, VGS @4.5V.  
Pulsed Drain Current, VGS @4.5V  
Continuous Source Current (Diode Conduction)a,b  
-4  
A
IDM  
IS  
-20  
A
-0.72  
0.9  
A
Ta = 25oC  
Ta = 75oC  
Maximum Power Dissipation  
PD  
W
0.57  
Operating Junction Temperature  
TJ  
+150  
- 55 to +150  
oC  
oC  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Performance  
Parameter  
Symbol  
TL  
Limit  
5
Unit  
S
Lead Temperature (1/8” from case)  
Junction to Ambient Thermal Resistance (PCB mounted)  
Notes:  
RӨJA  
250  
oC/W  
a. Pulse width limited by the Maximum junction temperature  
b. Surface Mounted on FR4 Board, t 5 sec.  
c. Surface Mounted on FR4 Board,  
1/6  
Version: A07  
TSM2311  
20V P-Channel MOSFET  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate Body Leakage  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
VGS = 0V, ID = -250uA  
VDS = VGS, ID = -250µA  
VGS = ±8V, VDS = 0V  
VDS = -16V, VGS = 0V  
VDS -10V, VGS = -5V  
VGS = -4.5V, ID = -4A  
VGS = -2.5V, ID = -2.5A  
VDS = -5V, ID = -4A  
BVDSS  
VGS(TH)  
IGSS  
-20  
-0.45  
--  
--  
--  
--  
-0.95  
±100  
-1.0  
--  
V
V
--  
nA  
µA  
A
IDSS  
--  
--  
ID(ON)  
-6  
--  
--  
45  
75  
9
55  
Drain-Source On-State Resistancea  
RDS(ON)  
mΩ  
--  
85  
Forward Transconductancea  
Diode Forward Voltage  
Dynamicb  
gfs  
--  
--  
S
V
IS = -0.75A, VGS = 0V  
VSD  
--  
- 0.8  
-1.2  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
6
9
--  
--  
--  
--  
--  
VDS = -6V, ID = -4A,  
VGS = -4.5V  
nC  
pF  
1.4  
1.9  
640  
180  
90  
VDS = -6V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switchingc  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
22  
35  
45  
25  
35  
55  
70  
50  
VDD = -6V, RL = 6Ω,  
ID = -1A, VGEN = -4.5V,  
RG = 6Ω  
nS  
Turn-Off Fall Time  
Notes:  
a. pulse test: PW 300µS, duty cycle 2%  
b. For DESIGN AID ONLY, not subject to production testing.  
b. Switching time is essentially independent of operating temperature.  
2/6  
Version: A07  
TSM2311  
20V P-Channel MOSFET  
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)  
Output Characteristics  
Transfer Characteristics  
On-Resistance vs. Drain Current  
Gate Charge  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
3/6  
Version: A07  
TSM2311  
20V P-Channel MOSFET  
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)  
On-Resistance vs. Gate-Source Voltage  
Threshold Voltage  
Single Pulse Power  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
4/6  
Version: A07  
TSM2311  
20V P-Channel MOSFET  
SOT-23 Mechanical Drawing  
SOT-23 DIMENSION  
MILLIMETERS  
MIN MAX  
0.95 BSC  
1.9 BSC  
2.60  
INCHES  
MIN MAX.  
DIM  
A
A1  
B
C
D
E
F
0.037 BSC  
0.074 BSC  
3.00  
1.70  
3.10  
1.30  
0.10  
0.50  
0.20  
0.60  
10º  
0.102  
0.118  
0.067  
0.122  
0.051  
0.004  
0.020  
0.008  
0.024  
10º  
1.40  
2.80  
1.00  
0.00  
0.35  
0.10  
0.30  
5º  
0.055  
0.110  
0.039  
0.000  
0.014  
0.004  
0.012  
5º  
G
H
I
J
Marking Diagram  
11 = Device Code  
= Year Code  
M = Month Code  
Y
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,  
I=Sep, J=Oct, K=Nov, L=Dec)  
L
= Lot Code  
5/6  
Version: A07  
TSM2311  
20V P-Channel MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to any  
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for  
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale  
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,  
or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers  
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for  
any damages resulting from such improper use or sale.  
6/6  
Version: A07  

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