TSM3401 [TSC]
-30V P-Channel Enhancement Mode MOSFET; -30V P沟道增强型MOSFET
| 型号： | TSM3401 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | -30V P-Channel Enhancement Mode MOSFET |
| 文件： | 总5页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM3401
-30V P-Channel Enhancement Mode MOSFET
Pin assignment:
VDS = - 30V
1. Gate
RDS (on), Vgs @ - 4.5V, Ids @ - 2A =100mΩ
2. Source
RDS (on), Vgs @ - 10V, Ids @ - 3A =75mΩ
3. Drain
Features
Rugged and reliable
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM3401CX
Tape & Reel
SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
- 30V
± 20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
VDS
VGS
ID
V
- 3
A
IDM
- 10
A
Ta = 25 oC
Ta = 75 oC
1.25
W
PD
0.8
Operating Junction Temperature
TJ
+150
- 55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
TL
Limit
5
Unit
S
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Rθja
100
oC/W
TSM3401
1-5
2005/05 rev. A
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = - 250uA
VGS = - 10V, ID = -3A
VGS = - 4.5V, ID = -2A
VDS = VGS, ID = - 250uA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS =-5V, VGS = -10V
VDS = -5V, ID = -3A
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
-30
--
--
--
--
75
V
mΩ
--
--
100
-2.5
-1.0
±100
--
-1
--
-1.5
--
V
uA
nA
A
IGSS
--
--
On-State Drain Current
Forward Transconductance
Dynamic
ID(ON)
gfs
6
--
--
5
--
S
VDS = -15V, ID = -3A, VGS = -10V
VDS = -15V, ID = -3A, VGS = -4.5V
--
--
--
--
--
--
--
--
--
--
--
13.5
7
--
--
--
--
--
--
--
--
--
--
--
Total Gate Charge
Qg
nC
nS
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
2.3
2.8
13
VDS = -15V, ID = -3A, VGS = -10V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = -15V, RL = 15Ω,
7
ID = -1A, VGEN = -10V, RG = 6Ω
td(off)
tf
58
26
Input Capacitance
Ciss
Coss
Crss
653
130
97
VDS = -15V, VGS = 0V,
pF
V
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
f = 1.0MHz
IS = - 1.6A, VGS = 0V
VSD
--
- 0.8
- 1.2
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM3401
2-5
2005/05 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM3401
3-5
2005/05 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM3401
4-5
2005/05 rev. A
SOT-23 Mechanical Drawing
A
B
F
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
2.88
0.39
1.78
0.51
1.59
1.04
0.07
MAX
2.91
0.42
2.03
0.61
1.66
1.08
0.09
MAX
0.115
0.017
0.080
0.024
0.065
0.043
0.004
A
B
C
D
E
F
0.113
0.015
0.070
0.020
0.063
0.041
0.003
E
G
G
D
C
TSM3401
5-5
2005/05 rev. A
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