TSM414K34CSRL [TSC]
30V N-Channel MOSFET with Schottky Diode; 30V N沟道MOSFET与肖特基二极管
| 型号： | TSM414K34CSRL |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V N-Channel MOSFET with Schottky Diode |
| 文件： | 总4页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
30V N-Channel MOSFET with Schottky Diode
TSM414K34
SOP-8
Pin Definition:
1. Anode
2. Anode
3. Source
4. Gate
MOSFET PRODUCT SUMMARY
8. Cathode
7. Cathode
6. Drain
VDS (V)
RDS(on)(mΩ)
55 @ VGS = 10V
65 @ VGS = 4.5V
ID (A)
4
2
30
5. Drain
SCHOTTKY PRODUCT SUMMARY
VRRM (V)
VF (V)
IF (A)
30
0.51
3
Block Diagram
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
Package
SOP-8
Packing
TSM414K34CS RL
2.5Kpcs / 13” Reel
N-Channel MOSFET with Schottky Diode
MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Drain-Source Voltage
VDS
VGS
ID
30
Gate-Source Voltage
±20
V
Continuous Drain Current, VGS
4
A
Pulsed Drain Current,
IDM
20
A
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation @ Ta = 25oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
IS
4
2
A
PD
W
oC
oC
TJ
+150
TJ, TSTG
-55 ~ +150
Schottky Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Drain-Source Voltage
VRRM
IF
30
3
V
A
A
Average Forward Current
Non-Peak Repetitive Surge Currentc
IFSM
20
Thermal Performance
Junction to Ambient Thermal Resistance
RӨJA
62.5
oC/W
Notes: a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec.
C. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz.
1/4
Version: Preliminary
Preliminary
30V N-Channel MOSFET with Schottky Diode
TSM414K34
MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250uA
VDS = VGS, ID = 250µA
VGS = ±20V, VDS = 0V
VDS = 24V, VGS = 0V
VDS ≥ 5V, VGS = 10V
VGS = 10V, ID = 4A
VGS = 4.5V, ID = 2A
VDS = 5V, ID = 4A
BVDSS
VGS(TH)
IGSS
30
1
--
1.4
--
--
3
V
V
--
±100
1.0
--
nA
µA
A
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
--
--
ID(ON)
30
--
--
30
40
20
1
45
55
--
Drain-Source On-State Resistancea
RDS(ON)
mΩ
--
Forward Transconductancea
Diode Forward Voltage
Dynamicb
gfs
--
S
V
IS = 4A, VGS = 0V
VSD
--
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
13
4.2
3.1
610
100
77
--
--
--
--
--
--
VDS = 15V, ID = 4A,
VGS = 10V
nC
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
9.1
16.5
23
--
--
--
--
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
nS
3.5
Schottky Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage Drop
IF = 3A
VFM
--
--
--
--
--
--
0.51
0.05
18
V
VR = 30V, Ta = 25oC
VR = 30V, Ta = 100oC
VR = 30V
Reverse Leakage Current
IR
mA
--
Voltage Rate of Charge
Notes:
dv/dt
10000
--
V/us
a. Pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/4
Version: Preliminary
Preliminary
TSM414K34
30V N-Channel MOSFET with Schottky Diode
SOP-8 Mechanical Drawing
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
4.80
3.80
1.35
0.35
0.40
MAX
5.00
4.00
1.75
0.49
1.25
MAX.
0.196
0.157
0.068
0.019
0.049
A
B
C
D
F
0.189
0.150
0.054
0.014
0.016
G
K
M
P
R
1.27BSC
0.05BSC
0.10
0º
0.25
7º
0.004
0º
0.009
7º
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
3/4
Version: Preliminary
Preliminary
30V N-Channel MOSFET with Schottky Diode
TSM414K34
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: Preliminary
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