TSM4835 [TSC]
30V P-Channel Enhancement Mode MOSFET; 30V P沟道增强型MOSFET
| 型号： | TSM4835 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V P-Channel Enhancement Mode MOSFET |
| 文件： | 总5页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4835
30V P-Channel Enhancement Mode MOSFET
Pin assignment:
VDS = - 30V
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ
RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ
4. Gate
5. Drain
Features
Block Diagram
Advanced trench process technology
High density cell design for ultra low on-resistance
High gate voltage
Ordering Information
Part No.
Packing
Tape & Reel
Package
SOP-8
TSM4835CS
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
- 30
Unit
V
Drain-Source Voltage
VDS
VGS
ID
Gate-Source Voltage
± 25
V
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Maximum Power Dissipation
- 9.5
A
IDM
PD
- 50
A
Ta = 25 oC
Ta > 25 oC
2.5
W
W
oC
oC
1.6
Operating Junction Temperature
TJ
+150
- 55 to +150
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Rθja
50
oC/W
TSM4835
1-5
2003/12 rev. A
Electrical Characteristics
Ta = 25oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = - 250uA
VGS = - 10V, ID = -9.5A
VGS = - 4.5V, ID = -7.5A
VDS = VGS, ID = - 250uA
VDS = - 30V, VGS = 0V
VGS = ± 25V, VDS = 0V
VDS = - 15V, ID = - 8A
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
- 30
--
--
13
22
--
--
18
V
mΩ
--
30
- 1
--
- 3
V
uA
nA
S
--
- 1.0
± 100
--
IGSS
--
--
Forward Transconductance
Dynamic
gfs
--
22
VDS = - 15V, ID = - 4.6A,
VGS = - 5V
--
23
34
Total Gate Charge
Qg
nC
VDS = - 15V, ID = - 4.6A,
VGS = - 10V
--
--
--
--
--
--
--
--
--
--
54
8.5
10.3
24
60
--
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
--
Turn-On Delay Time
Turn-On Rise Time
VDD = - 15V, RL = 15Ω,
30
30
120
80
--
ID = - 1A, VGEN = - 10V,
nS
pF
12
RG = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
78
37
Input Capacitance
VDS = - 15V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
Crss
2520
490
330
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
--
--
IS
--
--
--
- 2.1
- 1.2
A
V
IS = - 2.1A, VGS = 0V
VSD
- 0.77
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM4835
2-5
2003/12 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM4835
3-5
2003/12 rev. A
Electrical Characteristics Curve (continued)
TSM4835
4-5
2003/12 rev. A
SOP-8 Mechanical Drawing
A
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
4.80
3.80
1.35
0.35
0.40
MAX
5.00
4.00
1.75
0.49
1.25
MAX
0.196
0.157
0.068
0.019
0.049
9
8
16
1
A
B
C
D
F
0.189
0.150
0.054
0.014
0.016
B
P
G
K
M
P
R
1.27 (typ)
0.05 (typ)
G
0.10
0o
0.25
7o
0.004
0o
0.009
7o
R
M
C
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
F
D
K
TSM4835
5-5
2003/12 rev. A
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