TSM4N80CZC0 [TSC]
800V N-Channel Power MOSFET; 800V N沟道功率MOSFET
| 型号： | TSM4N80CZC0 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 800V N-Channel Power MOSFET |
| 文件： | 总10页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4N80
800V N-Channel Power MOSFET
TO-220
ITO-220
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
VDS (V)
RDS(on)(Ω)
ID (A)
3. Source
800
3 @ VGS =10V
4
General Description
The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Block Diagram
Features
●
●
Low RDS(ON) 3Ω (Max.)
Low gate charge typical @ 25nC (Typ.)
●
Improve dv/dt capability
Ordering Information
Part No.
TSM4N80CZ C0
TSM4N80CI C0
Package
Packing
TO-220
ITO-220
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
VDS
TO-220
ITO-220
Unit
V
Drain-Source Voltage
Gate-Source Voltage
800
±30
VGS
V
Tc = 25oC
Tc = 100oC
4
4 *
Continuous Drain Current
ID
A
2.5
16
2.5 *
16 *
4.5
Pulsed Drain Current *
IDM
dv/dt
EAS
IAR
A
V
Peak Diode Recovery dv/dt (Note 3)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
85
mJ
A
4
EAR
12.3
38.7
0.3
mJ
W
Tc = 25oC
123
Power Dissipation
PD
Derate above 25℃
0.98
ºC/W
Operating Junction Temperature
TJ
150
ºC
Storage Temperature Range
TSTG
-55 to +150
oC
* Limited by maximum junction temperature
1/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
RӨJC
TO-220
ITO-220
Unit
Thermal Resistance - Junction to Case
1.01
3.23
oC/W
Thermal Resistance - Junction to Ambient
RӨJA
62.5
Notes: Surface mounted on FR4 board t ≤ 10sec
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = 250uA
VGS = 10V, ID = 2.0A
VDS = VGS, ID = 250uA
VDS = 800V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 30V, ID = 2.0A
IS = 4A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
800
--
--
2.5
--
--
3.0
4.0
10
V
Ω
2.0
--
V
--
uA
nA
S
IGSS
--
--
±100
--
Forward Transconductance
Diode Forward Voltage
gfs
--
7.1
--
VSD
--
1.5
V
b
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
20
3.7
8.2
955
80
--
--
--
--
--
--
VDS = 640V, ID = 4A,
VGS = 10V
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
13
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
--
--
49
38
--
--
--
--
--
--
VGS = 10V, ID = 4A,
nS
VDD = 400V, RG = 25Ω
146
50
Reverse Recovery Time
tfr
487
2.8
nS
uC
VGS = 0V, IS = 4A,
dIF/dt = 100A/us
Reverse Recovery Charge
Qfr
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=4A, L=10mH, RG=25Ω, Starting TJ=25℃
3. ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting TJ=25℃
4. Pulse test: pulse width ≤300uS, duty cycle ≤2%
5. b For design reference only, not subject to production testing.
6. c Switching time is essentially independent of operating temperature.
2/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (TO-220)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
6/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
7/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Lot Code
L
8/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Lot Code
L
9/10
Version: C13
TSM4N80
800V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
10/10
Version: C13
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