TSM5N50 [TSC]
500V N-Channel Power MOSFET; 500V N沟道功率MOSFET
| 型号： | TSM5N50 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 500V N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM5N50
500V N-Channel Power MOSFET
TO-220
Pin Definition:
1. Gate
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
2. Drain
3. Source
500
1.8 @ VGS =10V
2.2
General Description
The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Block Diagram
Features
●
●
●
●
●
Low gate charge typical @ 13nC
Low Crss typical @ 8.5pF
Fast Switching
100% avalanche tested
Improved dv/dt capability
Ordering Information
Part No.
Package
TO-220
Packing
TSM5N50CZ C0
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
500
±30
4.5
Unit
V
Drain-Source Voltage
VDS
VGS
ID
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current
A
IDM
IS
18
A
Continuous Source Current (Diode Conduction)
Peak Diode Recovery (Note 2)
4.5
A
dv/dt
4.5
V/ns
Single Pulse Drain to Source Avalanche Energy (Note 3)
EAS
300
mJ
Maximum Power Dissipation @Ta = 25oC
PD
85
W
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
RӨJC
Limit
1.47
Unit
oC/W
oC/W
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
62.5
RӨJA
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Version: A07
TSM5N50
500V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = 250uA
VGS = 10V, ID = 2.2A
VDS = VGS, ID = 250uA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 50V, ID = 2.2A
IS = 4.5A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
500
--
--
1.36
--
--
1.8
5.0
1
V
Ω
3.0
--
V
--
uA
nA
S
IGSS
--
--
±100
--
Forward Transconductance
Diode Forward Voltage
gfs
--
4
VSD
--
--
1.4
V
b
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
13
3.4
6.4
470
75
17
--
VDS = 250V, ID = 4.5A,
VGS = 10V
nC
pF
Gate-Source Charge
Gate-Drain Charge
--
Input Capacitance
610
95
11
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
8.5
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
--
--
13
55
35
120
60
80
--
VGS = 10V, ID = 4.5A,
VDD = 250V, RG = 25Ω
nS
uC
25
35
Reverse Recovery Time
VGS = 0V, IS = 4.5A,
dIF/dt = 100A/us
tfr
215
1.26
Reverse Recovery Charge
Notes:
Qfr
--
1. Pulse test: pulse width ≤300uS, duty cycle ≤2%
2. ISD<4.5A, di/dt<200A/us, VDD<BVDSS
3. VDD = 50V, VGS=10V, IAS=4.5A, L=27mH, RG=25Ω
4. For design reference only, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSM5N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM5N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM5N50
500V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
10.000
3.740
2.440
-
MAX
10.500
3.910
2.940
6.350
1.106
2.715
5.430
14.732
16.510
4.826
1.397
29.620
2.921
0.610
6.858
MAX
0.413
0.154
0.116
0.250
0.040
0.058
0.107
0.581
0.650
0.190
0.055
1.230
0.115
0.024
0.270
A
B
C
D
E
F
0.394
0.147
0.096
-
0.381
2.345
4.690
12.700
14.224
3.556
0.508
27.700
2.032
0.255
5.842
0.015
0.092
0.092
0.500
0.560
0.140
0.020
1.060
0.080
0.010
0.230
G
H
J
K
L
M
N
O
P
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/6
Version: A07
TSM5N50
500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: A07
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