TSM5NS50CPRO [TSC]

500V N-Channel Power MOSFET; 500V N沟道功率MOSFET
TSM5NS50CPRO
型号: TSM5NS50CPRO
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

500V N-Channel Power MOSFET
500V N沟道功率MOSFET

文件: 总6页 (文件大小:366K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSM5NS50  
500V N-Channel Power MOSFET  
PRODUCT SUMMARY  
TO-252  
Pin Definition:  
1. Gate  
VDS (V)  
RDS(on)(Ω)  
ID (A)  
2. Drain  
3. Source  
500  
0.8 @ VGS = 10V  
4
Features  
Block Diagram  
Low RDS(on)  
Low Gate Charge  
Unclamped Inductive Switching (UIS) Rated  
Application  
Load Switch  
Ballast  
Lighting  
Ordering Information  
Part No.  
Package  
TO-252  
Packing  
N-Channel MOSFET  
TSM5NS50CP RO  
T&R  
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
500  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
±20  
V
Continuous Drain Current  
Pulsed Drain Current  
4.4  
A
IDM  
20  
A
Repetitive Avalanche Current  
Energy Avalanche  
IAR  
5
A
EAS  
PD  
150  
mJ  
W
oC  
oC  
Maximum Power Dissipation  
Operating Junction Temperature  
Ta = 25 oC  
70  
TJ  
+150  
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
1.78  
62  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
Notes:  
RӨJA  
a. When mounted on 1 inch square 2oz copper clad FR-4  
1/6  
Version: A07  
TSM5NS50  
500V N-Channel Power MOSFET  
Electrical Specifications  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate Body Leakage  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 250µA  
VGS = ±20V, VDS = 0V  
VDS = 500V, VGS = 0V  
VGS = 10V, ID = 4.0A  
IS = 4.4A, VGS = 0V  
BVDSS  
VGS(TH)  
IGSS  
500  
2
--  
--  
--  
4
V
V
--  
--  
±100  
1.0  
0.8  
1.5  
nA  
µA  
Ω
Zero Gate Voltage Drain Current  
Drain-Source On-State Resistance  
Diode Forward Voltage  
IDSS  
--  
--  
a
RDS(ON)  
VSD  
--  
0.7  
1.0  
--  
V
b
Dynamic  
Total Gate Charge  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
13  
3
--  
--  
--  
--  
--  
--  
VDS = 520V, ID = 4.4A,  
VGS = 10V  
nC  
pF  
Gate-Source Charge  
Gate-Drain Charge  
6
Input Capacitance  
400  
120  
40  
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
c
Switching  
Turn-On Delay Time  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
6
3
--  
--  
--  
--  
VGS = 10V, ID = 4.4A,  
Turn-On Rise Time  
nS  
nS  
VDS = 350V, RG = 25Ω  
Turn-Off Delay Time  
50  
10  
Turn-Off Fall Time  
Source-to-Drain Reverse Recovery  
IS = 4.4A,  
tr  
--  
250  
00  
Time  
di/dt = 100A/uS  
Notes:  
a. Pulse test: pulse width <=300uS, duty cycle <=2%  
b. For design reference only, not subject to production testing.  
c. Switching time is essentially independent of operating temperature.  
2/6  
Version: A07  
TSM5NS50  
500V N-Channel Power MOSFET  
Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)  
Output Characteristics  
Transfer Characteristics  
On-Resistance vs. Drain Current  
Gate Charge  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
3/6  
Version: A07  
TSM5NS50  
500V N-Channel Power MOSFET  
Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)  
On-Resistance vs. Gate-Source Voltage  
Threshold Voltage  
Maximum Safe Operating Area  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
4/6  
Version: A07  
TSM5NS50  
500V N-Channel Power MOSFET  
SOT-252 Mechanical Drawing  
TO-252 DIMENSION  
MILLIMETERS  
MIN MAX  
2.3BSC  
4.6BSC  
INCHES  
MIN MAX  
DIM  
A
A1  
B
0.09BSC  
0.18BSC  
6.80  
5.40  
6.40  
2.20  
0.00  
5.20  
0.75  
0.55  
0.35  
0.90  
2.20  
0.50  
0.90  
1.30  
7.20  
5.60  
6.65  
2.40  
0.20  
5.40  
0.85  
0.65  
0.65  
1.50  
2.80  
1.10  
1.50  
1.70  
0.268  
0.283  
0.220  
0.262  
0.094  
0.008  
0.213  
0.033  
0.026  
0.026  
0.059  
0.110  
0.043  
0.059  
0.67  
C
D
E
0.213  
0.252  
0.087  
0.000  
0.205  
0.030  
0.022  
0.014  
0.035  
0.087  
0.020  
0.035  
0.051  
F
G
G1  
G2  
H
I
J
K
L
M
5/6  
Version: A07  
TSM5NS50  
500V N-Channel Power MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to any  
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for  
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale  
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,  
or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers  
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for  
any damages resulting from such improper use or sale.  
6/6  
Version: A07  

相关型号:

TSM600

PolySwitch Resettable Devices Telecommunications & Networking Devices
TE

TSM600-250

PolySwitch PTC Devices Overcurrent Protection Device
TE

TSM600-250-RA

PolySwitch PTC Devices Overcurrent Protection Device
TE

TSM600-250F

PolySwitch Resettable Devices Telecommunications & Networking Devices
TE

TSM600-250F-2

PolySwitch Resettable Devices Telecommunications & Networking Devices
TE

TSM600-250F-RA

PolySwitch®PTC Devices
TE

TSM600-250F-RA-2

PolySwitch Resettable Devices Telecommunications & Networking Devices
TE

TSM600-400F

PolySwitch Resettable Devices Telecommunications & Networking Devices
TE

TSM600-400F-2

PolySwitch Resettable Devices Telecommunications & Networking Devices
TE

TSM600N25E

250V N-Channel Power MOSFET
TSC

TSM600N25ECHC5G

250V N-Channel Power MOSFET
TSC

TSM600N25ECPROG

250V N-Channel Power MOSFET
TSC