TSM650P03CXRFG [TSC]
30V P-Channel Power MOSFET;
| 型号： | TSM650P03CXRFG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V P-Channel Power MOSFET |
| 文件： | 总5页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM650P03CX
30V P-Channel Power MOSFET
SOT-23
Key Parameter Performance
Pin Definition:
1. Gate
2. Source
Parameter
Value
-30
65
Unit
3. Drain
VDS
V
VGS =- 10V
VGS = -4.5V
VGS = -2.5V
RDS(on) (max)
75
mΩ
100
8
Qg
nC
Block Diagram
Features
●
●
●
Fast Switching
Suited for -2.5V Gate Drive Applications
Halogen-free
Ordering Information
Part No.
Package
SOT-23
Packing
TSM650P03CX RFG
3kcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Limit
Parameter
Symbol
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±12
-4.1
-2.6
V
TC = 25°C
A
Continuous Drain Current
ID
TC = 100°C
A
Pulsed Drain Current (Note 1)
IDM
PD
A
-16.4
1.56
Power Dissipation @ TC = 25℃
Operating Junction Temperature
Storage Temperature Range
W
°C
°C
TJ
150
-55 to +150
TSTG
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Ambient
RӨJA
80
°C/W
1/5
Version: A14
TSM650P03CX
30V P-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
BVDSS
Min
Typ
Max
Unit
V
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
VGS = -10V, ID = -4A
VGS = -4.5V, ID = -3A
VGS = -2.5V, ID = -2A
VDS = VGS, ID = -250µA
VDS = -30V, VGS = 0V
VDS = -24V, TJ = 125°C
VGS = ±12V, VDS = 0V
VDS = -10V, ID = -3A
-30
--
--
55
--
65
--
65
75
Drain-Source On-State Resistance
RDS(on)
mΩ
--
85
100
-0.9
-0.4
-0.7
Gate Threshold Voltage
VGS(TH)
IDSS
V
--
--
--
--
--
--
-1
-10
±100
--
Zero Gate Voltage Drain Current
µA
Gate Body Leakage
Forward Transconductance (Note 2)
IGSS
gfs
--
nA
S
5.4
Dynamic
Total Gate Charge (Note 2,3)
Gate-Source Charge (Note 2,3)
Gate-Drain Charge (Note 2,3)
Input Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
--
--
--
--
--
--
8
VDS = -15V, ID = -4A,
VGS = -4.5V
1.9
1.4
810
85
nC
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
50
Reverse Transfer Capacitance
Switching
Turn-On Delay Time (Note 2,3)
Turn-On Rise Time (Note 2,3)
Turn-Off Delay Time (Note 2,3)
Turn-Off Fall Time (Note 2,3)
td(on)
tr
td(off)
tf
--
--
--
--
--
--
--
--
5.4
19.4
45.9
12.4
VDD = -15V, ID = -1A,
ns
A
VGS = -10V, RGEN = 6Ω
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
-4.1
IS
--
--
Diode Forward Current
Integral reverse diode in
the MOSFET
Maximum Pulse Drain-Source Diode
Forward Current
-16.4
-1
ISM
--
--
--
--
A
V
Diode-Source Forward Voltage
VGS = 0V, IS = -1A
VSD
Note:
1.
2.
3.
Pulse width limited by safe operating area
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM650P03CX
30V P-Channel Power MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. TC
Normalized RDS(on) vs. TJ
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs. Junction Temperature
Gate Charge Waveform
TJ, Junction Temperature (°C)
Qg , Gate Charge (nC)
Normalized Thermal Transient Impedance Curve
Maximum Safe Operating Area
Square Wave Pulse Duration (s)
-VDS, Drain to Source Voltage (V)
3/5
Version: A14
TSM650P03CX
30V P-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
63 = Device Code
= Year Code
M = Month Code for Halogen Free Product
Y
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
4/5
Version: A14
TSM650P03CX
30V P-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A14
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