TUAS8J [TSC]

8A, 200V - 1000V Standard Surface Mount Rectifier;
TUAS8J
型号: TUAS8J
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

8A, 200V - 1000V Standard Surface Mount Rectifier

文件: 总6页 (文件大小:515K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TUAS8D TUAS8M  
Taiwan Semiconductor  
8A, 200V - 1000V Standard Surface Mount Rectifier  
FEATURES  
KEY PARAMETERS  
Low power loss, high efficiency  
Ideal for automated placement  
Wettable flank  
Moisture sensitivity level: level 1, per J-STD-020  
RoHS Compliant  
PARAMETER  
IF  
VRRM  
VALUE  
UNIT  
8
A
V
200 - 1000  
230  
IFSM  
A
Halogen-free according to IEC 61249-2-21  
TJ MAX  
150  
°C  
Package  
Configuration  
TO-277A (SMPC4.6U)  
Single die  
APPLICATIONS  
DC to DC converter  
Switching mode converters and inverters  
General purpose  
MECHANICAL DATA  
Case: TO-277A (SMPC4.6U)  
Molding compound meets UL 94V-0 flammability rating  
Terminal: Matte tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 1 whisker test  
Polarity: Indicated by cathode band  
Weight: 0.104g (approximately)  
TO-277A (SMPC4.6U)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
PARAMETER  
SYMBOL TUAS8D TUAS8G TUAS8J TUAS8K TUAS8M UNIT  
Marking code on the device  
Repetitive peak reverse voltage  
Reverse voltage, total rms value  
AS8D  
AS8G  
AS8J  
600  
420  
8
AS8K  
AS8M  
1000  
700  
VRRM  
VR(RMS)  
IF  
200  
400  
800  
V
V
A
140  
280  
560  
Forward current  
Surge peak forward  
t = 8.3ms  
t = 1.0ms  
230  
580  
A
A
current single half sine-  
wave superimposed on  
rated load  
IFSM  
Junction temperature  
Storage temperature  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
1
Version: B2103  
TUAS8D TUAS8M  
Taiwan Semiconductor  
THERMAL PERFORMANCE  
PARAMETER  
Junction-to-lead thermal resistance  
Junction-to-ambient thermal resistance  
Junction-to-case thermal resistance  
SYMBOL  
RӨJL  
TYP  
4
UNIT  
°C/W  
°C/W  
°C/W  
RӨJA  
38  
8
RӨJC  
Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board)  
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)  
PARAMETER  
CONDITIONS  
IF = 4A, TJ = 25°C  
IF = 8A, TJ = 25°C  
IF = 4A, TJ = 125°C  
IF = 8A, TJ = 125°C  
IF = 4A, TJ = 25°C  
IF = 8A, TJ = 25°C  
IF = 4A, TJ = 125°C  
IF = 8A, TJ = 125°C  
TJ = 25°C  
SYMBOL  
TYP  
0.90  
0.96  
0.78  
0.87  
0.90  
0.97  
0.78  
0.87  
-
MAX  
UNIT  
V
-
1.10  
-
TUAS8D  
TUAS8G  
TUAS8J  
V
V
1.01  
-
V
Forward voltage(1)  
VF  
V
1.10  
-
V
TUAS8K  
TUAS8M  
V
1.01  
5
V
µA  
µA  
(2)  
Reverse current @ rated VR  
IR  
TJ = 125°C  
-
60  
TUAS8D  
TUAS8G  
TUAS8J  
TUAS8K  
TUAS8M  
62  
54  
-
-
pF  
pF  
Junction capacitance  
1MHz, VR = 4.0V  
CJ  
Notes:  
1. Pulse test with PW = 0.3ms  
2. Pulse test with PW = 30ms  
ORDERING INFORMATION  
ORDERING CODE(1)  
PACKAGE  
TO-277A (SMPC4.6U)  
PACKING  
6,000 / Tape & Reel  
TUAS8x  
Notes:  
1. xdefines voltage from 200V(TUAS8D) to 1000V(TUAS8M)  
2
Version: B2103  
TUAS8D TUAS8M  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.1 Forward Current Derating Curve  
Fig.2 Typical Junction Capacitance  
10  
8
1000  
100  
10  
6
TUAS8D - TUAS8J  
TUAS8K - TUAS8M  
4
2
f=1.0MHz  
Vsig=50mVp-p  
0
0
25  
50  
75  
100  
125  
150  
1
10  
100  
REVERSE VOLTAGE (V)  
LEAD TEMPERATURE (°C)  
Fig.3 Typical Reverse Characteristics  
Fig.4 Typical Forward Characteristics  
10  
100  
10  
TUAS8D TUAS8J  
TJ=150°C  
TUAS8D TUAS8J  
TJ=150°C  
TJ=125°C  
TJ=25°C  
TJ=125°C  
1
1
TJ=-55°C  
0.1  
0.01  
TJ=25°C  
Pulse width 300μs  
1% duty cycle  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
10 20 30 40 50 60 70 80 90 100  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Fig.5 Typical Reverse Characteristics  
Fig.6 Typical Forward Characteristics  
10  
1000  
100  
10  
TUAS8K TUAS8M  
TJ=150°C  
TUAS8K TUAS8M  
TJ=150°C  
TJ=125°C  
TJ=25°C  
TJ=-55°C  
TJ=125°C  
TJ=25°C  
1
1
0.1  
0.01  
Pulse width 300μs  
1% duty cycle  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
10 20 30 40 50 60 70 80 90 100  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
3
Version: B2103  
TUAS8D TUAS8M  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.7 Typical Transient Thermal Impedance  
100  
10  
1
0.1  
0.01  
0.001  
0.0001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
PULSE DURATION (s)  
4
Version: B2103  
TUAS8D TUAS8M  
Taiwan Semiconductor  
PACKAGE OUTLINE DIMENSIONS  
TO-277A (SMPC4.6U)  
SUGGESTED PAD LAYOUT  
MARKING DIAGRAM  
P/N  
YW  
F
= Marking Code  
= Date Code  
= Factory Code  
5
Version: B2103  
TUAS8D TUAS8M  
Taiwan Semiconductor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf  
assumes no responsibility or liability for any errors or inaccuracies.  
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability  
for application assistance or the design of Purchasers’ products.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
6
Version: B2103  

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