US1K [TSC]
1.0 Amps. Surface Mount Ultrafast Rectifiers; 1.0安培。表面贴装超快整流器
| 型号： | US1K |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 Amps. Surface Mount Ultrafast Rectifiers |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1A THRU US1M
1.0 Amps. Surface Mount Ultrafast Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Amperes
SMA/DO-214AC
Features
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Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260OC/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
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.091(2.30)
.078(1.99)
.012(.31)
.006(.15)
Mechanical Data
.008(.20)
.004(.10)
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Cases: Molded plastic
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
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Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 gram
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Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
US1A US1B US1D US1G US1J US1K US1M
Symbol
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@ TL=110℃
100 200 400
00
800 1000
I(AV)
1.0
A
A
V
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
IFSM
30
VF
IR
1.0
1.7
Maximum DC Reverse Current @ TA =25℃
10
50
uA
uA
nS
pF
at Rated DC Blocking Voltage @ TA=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Trr
Cj
50
15
75
10
RθJA
RθJL
TJ
75
27
Maximum Thermal Resistance (Note 3)
℃/W
℃
℃
Operating Temperature Range
Storage Temperature Range
-55 to +150
-55 to + 150
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.
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RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
50
1.2
1.0
TL=900C
8.3ms Single Half Sine Wave
JEDEC Method
40
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
0
1
10
NUMBER OF CYCLES AT 60Hz
100
0
20
40
60
80
100
120
160
180
140
LEAD TEMPERATURE. (oC)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
100
US1A - US1G
1
10
Tj=1000C
US1J - US1M
0.1
1
Tj=250C
0.01
0.1
Pulse Width=300
1% Duty Cycle
s
0.001
0.4
0.01
0.6
0.8
1.0
1.2
FORWARD VOLTAGE. (V)
1.4
1.6
1.8
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
US1A - US1G
10
US1J - US1M
10
1
0.1
1
0.01
0.1
1
10
100
0.1
1
10
100
T, PULSE DURATION, sec.
REVERSE VOLTAGE. (V)
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