US1M [TSC]
1.0 Amps. Surface Mount High Efficient Rectifiers; 1.0安培。表面贴装高效整流器
| 型号： | US1M |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 Amps. Surface Mount High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1A - US1M
1.0 Amps. Surface Mount High Efficient Rectifiers
SMA/DO-214AC
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260oC/10 seconds on terminals
ꢀ
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Dimensions in inches and (millimeters)
ꢀ
Cases: Molded plastic
ꢀ
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 gram
ꢀ
ꢀ
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol US1A US1B US1D US1G US1J US1K US1M Units
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
100 200 400
00
800 1000
Maximum Average Forward Rectified Current
@ TL=110 oC
I(AV)
IFSM
1.0
A
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
30
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
IR
1.0
1.7
V
Maximum DC Reverse Current
@ TA =25 oC at Rated DC Blocking Voltage
@ TA=125 oC
5.0
150
uA
uA
nS
Maximum Reverse Recovery Time ( Note 1 )
Trr
Cj
50
75
10
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
15
75
27
pF
R
θJA
oC/W
R
θJL
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +150
-55 to + 150
oC
TSTG
oC
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
Notes:
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.
Version: B07
RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
1.2
1.0
50
TL=900C
8.3ms Single Half Sine Wave
JEDEC Method
40
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
0
0
20
40
60
80
100
120
160
180
140
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
US1A - US1G
1
10
Tj=1000C
US1J - US1M
0.1
1
Tj=250C
0.01
0.1
Pulse Width=300
1% Duty Cycle
s
0.001
100
0.01
1.2
FORWARD VOLTAGE. (V)
1.4
1.6
1.8
0.4
0.6
0.8
1.0
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10
10
1
1
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION, sec.
FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: B07
相关型号：
US1M-E3/5AT
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
US1M-E3/61T
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
US1M-HE3
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
US1M-T3-LF
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
WTE
©2020 ICPDF网 联系我们和版权申明