2N6987U [TTELEC]

Surface Mount Quad PNP Transistor;


型号：	2N6987U
厂家：	TT Electronics
描述：	Surface Mount Quad PNP Transistor 开关晶体管
文件：	总4页 (文件大小：224K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Surface Mount Quad PNP

Transistor

2N6987U (TX, TXV)

Features:

 Ceramic 20 pin surface mount package

 Small package to minimize circuit board area

 Electrical performance similar to a 2N2907

 Hermetically sealed

 Processed per MIL-PRF-19500/558

Description:

The 2N6987U (TX, TXV) is a hermeꢀcally sealed, ceramic surface‐mount device, consisꢀng of 4 silicon PNP transistors. The

20 pin ceramic package is ideal for designs where board space and device weight are important design consideraꢀons.

Typical screening and lot acceptance test are per MIL‐PRF‐19500/558. The burn‐in condiꢀon is V_CB= 30 V, P_D= 250 mW

each transistor, T_A=25° C. Refer to MIL‐PRF‐19500/558 for complete requirements.

When ordering parts without processing, do not use the TX or TXV suﬃx.

Applications:

 General switching

 Ampliﬁcation

 Signal processing

 Radio transmission

 Logic gates

General Note

OPTEK Technology, Inc.

TT Electronics reserves the right to make changes in product speciﬁcation without

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

notice or liability. All information is subject to TT Electronics’ own data and is

www.optekinc.com | www.ttelectronics.com

considered accurate at time of going to print.

Issue B 08/2016 Page 1

Surface Mount Quad PNP

Transistor

2N6987U (TX, TXV)

Electrical Speciﬁcations

Absolute Maximum Ratings (T_A= 25° C unless otherwise noted)

Collector‐Emiꢁer Voltage

60 V

Collector‐Base Voltage

Emiꢁer‐Base Voltage

5 V

Collector Current‐Conꢀnuous

600 mA

‐65° C to +200 °C

0.5 W

Operaꢀng and Storage (T_J, T_stg)

Power Dissipaꢀon (single transistor, no heat sink)

Power Dissipaꢀon (total device)

Isolaꢀon Voltage

1 W⁽¹⁾

500 V

Electrical Characteristics (T_A= 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN MAX UNITS

TEST CONDITIONS

OFF CHARACTERISTICS

V_(BR)CBOCollector‐Base Breakdown Voltage

V_(BR)CEOCollector‐Emiꢁer Breakdown Voltage

V_(BR)EBOEmiꢁer‐Base Breakdown Voltage

I_C= 10 µA

I_C= 10 µA⁽²⁾

I_E= 10 µA

V_CB= 50 V

I_CBO2

I_CBO3

I_EBO

Collector‐Base Cutoﬀ Current

Emiꢁer‐Base Cutoﬀ Current

µA

V_EB= 50 V, TA = 150° C

V_EB= 4 V

ON CHARACTERISTICS

h_{FE 1}

h_{FE 2}

h_{FE 3}

h_{FE 4}

h_{FE 5}

h_{FE 6}

Forward‐Current Transfer Raꢀo

‐

V_CE= 10 V, I_C= 0.1 mA

Forward‐Current Transfer Raꢀo

100 450

_CE= 10 V, I_C= 1.0 mA

_CE= 10 V, I_C= 10 mA⁽²⁾

_CE= 10 V, I_C= 150 mA⁽²⁾

_CE= 10 V, I_C= 500 mA⁽²⁾

_CE= 10 V, I_C= 1 mA, T_A= ‐55° C⁽²⁾

100

100 300

Note:

1. Derate linearly 8.57 mW/°C above T_A= 25°C

2. Pulse Width = 300 µs ±50, 1‐2% Duty Cycle

General Note

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Issue B 08/2016 Page 2

Surface Mount Quad PNP

Transistor

2N6987U (TX, TXV)

Electrical Characteristics (T_A= 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN MAX UNITS

TEST CONDITIONS

ON CHARACTERISTICS

V_{CE (SAT)}

Collector‐Emiꢁer Saturaꢀon Voltage

0.4

I_C= 150 mA, I_B= 15 mA⁽²⁾

V_{CE (SAT)2}

V_{BE(SAT) 1}

V_{BE(SAT) 2}

Collector‐Emiꢁer Saturaꢀon Voltage

Base‐Emiꢁer Saturaꢀon Voltage

1.6

1.3

2.6

I_C= 500 mA, I_B= 50 mA⁽²⁾

I_C= 150 mA, I_B= 15 mA⁽²⁾

I_C= 500 mA, I_B= 50 mA⁽²⁾

SMALL‐SIGNAL CHARACTERISTICS

Magnitude of Small‐Signal Short‐Circuit

Forward Current Transfer Raꢀo

| h_fe|

h_fe

‐

V_CE= 20 V, I_C= 50 mA, f = 100 MHz

V_CE= 10 V, I_C= 1 mA, f = 1 kHz

Small Signal Short Circuit Forward Current

Transfer Raꢀo

100

C_obo

C_ibo

Open Circuit Output Capacitance

Input Capacitance (Output Open)

V_CB= 10 V, I_E= 0, 100 kHz ≤ f ≤ 1 MHZ

V_EB= 2 V, I_C=0, 100 kHz ≤ f ≤ 1 MHZ

SWITCHING CHARACTERISTICS

t_on

t_oﬀ

Turn‐On Time

Turn‐Oﬀ Time

V_CC= 30 V, I_C= 150 mA, I_B1= 15 mA

300

V_CC= 30 V, I_C= 150 mA, I_B1= I_B2= 15 mA

TRANSISTOR TO TRANSISTOR ISOLATION

R_t‐tIsolaꢀon Resistance

10k

MΩ

V_t‐t= 500 V

Note:

1. Derate linearly 8.57 mW/°C above T_A= 25°C

2. Pulse Width = 300 µs ±50, 1‐2% Duty Cycle

General Note

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Issue B 08/2016 Page 3

Surface Mount Quad PNP

Transistor

2N6987U (TX, TXV)

Issue

Change Description

Approval

Date

Updated with new TT format; changed V_{(BR)CBO and}V_(BR(CEOfromI_C= 10

mA to I_C= 10 µA; changed I_CBO1and I_CBO2to I_CBO2and I_CBO3

Rodney Bailey

04 Aug 2016

General Note

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Issue B 08/2016 Page 4

2N6987U [TTELEC]

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