2N6989U [TTELEC]
Surface Mount Quad NPN Transistor;
| 型号： | 2N6989U |
| 厂家： | 
TT Electronics |
| 描述： | Surface Mount Quad NPN Transistor 开关 晶体管 |
| 文件： | 总3页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount Quad NPN
Transistor
2N6989U (TX, TXV)
Features:
Ceramic 20 pin surface mount package
Small package to minimize circuit board area
Electrical performance similar to a 2N2222A
Hermetically sealed
Processed per MIL-PRF-19500/559
Description:
The 2N6989U (TX, TXV) is a hermeꢀcally sealed, ceramic surface‐mount device, consisꢀng of 4 silicon NPN transistors. The
20 pin ceramic package is ideal for designs where board space and device weight are important design consideraꢀons.
Typical screening lot acceptance test are per MIL‐PRF‐19500/559. The burn‐in condiꢀon is VCB = 30 V, PD = 250 mW each
transistor, TA =25° C. Refer to MIL‐PRF‐19500/558 for complete requirements.
When ordering parts without processing, do not use the TX or TXV suffix.
Applications:
General switching
Amplification
Signal processing
Radio transmission
Logic gates
General Note
OPTEK Technology, Inc.
TT Electronics reserves the right to make changes in product specification without
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
notice or liability. All information is subject to TT Electronics’ own data and is
www.optekinc.com | www.ttelectronics.com
considered accurate at time of going to print.
Issue B 08/2016 Page 1
© TT electronics plc
Surface Mount Quad NPN
Transistor
2N6989U (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Collector‐Base Voltage
75 V
50 V
Collector‐Emiꢁer Voltage
Emiꢁer‐Base Voltage
6.0 V
Collector Current‐Conꢀnuous
800 mA
Operaꢀng Juncꢀon Temperature (TJ )
Storage Juncꢀon Temperature (Tstg)
Power Dissipaꢀon (single transistor, no heat sink)
Power Dissipaꢀon TA = 25° C (four devices driven equally)
Isolaꢀon Voltage
‐65° C to +200 °C
‐65° C to +200 °C
0.5 W
1.0 W(1)
500 V
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)CBO Collector‐Base Breakdown Voltage
V(BR)CEO Collector‐Emiꢁer Breakdown Voltage
V(BR)EBO Emiꢁer‐Base Breakdown Voltage
75
50
6
V
V
IC = 10 µA
IC = 10 mA(2)
IE = 10 µA
VCB = 60 V
V
ICBO
ICBO2
IEBO
Collector‐Base Cutoff Current
Emiꢁer‐Base Cutoff Current
Emiꢁer‐Base Cutoff Current
10
10
10
nA
µA
nA
VCB = 60 V, TA = 150° C
VEB = 4 V
ON CHARACTERISTICS
hFE 1
hFE 2
hFE 3
hFE 4
hFE 5
hFE 6
Forward‐Current Transfer Raꢀo
50
75
‐
‐
‐
‐
‐
‐
VCE = 10 V, IC = 0.1 mA
Forward‐Current Transfer Raꢀo
Forward‐Current Transfer Raꢀo
Forward‐Current Transfer Raꢀo
Forward‐Current Transfer Raꢀo
Forward‐Current Transfer Raꢀo
325
V
V
V
V
V
CE = 10 V, IC = 1.0 mA
CE = 10 V, IC = 10 mA(2)
CE = 10 V, IC = 150 mA(2)
CE = 10 V, IC = 500 mA(2)
CE = 10 V, IC = 10 mA, TA = 55° C(2)
100
100 300
30
35
Note:
1. Derate linearly 8.57 mW/°C above TA = 25°C
2. Pulse Width = 300 µs ±50, 1‐2% Duty Cycle
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue B 08/2016 Page 2
© TT electronics plc
Surface Mount Quad NPN
Transistor
2N6989U (TX, TXV)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
ON CHARACTERISTICS
VCE (SAT)1
Collector‐Emiꢁer Saturaꢀon Voltage
0.3
V
IC = 150 mA, IB= 15 mA(2)
VCE (SAT)2
VCE (SAT)3
VBE(SAT) 1
VBE(SAT) 2
VBE(SAT) 3
Collector‐Emiꢁer Saturaꢀon Voltage
Collector‐Emiꢁer Saturaꢀon Voltage
Base‐Emiꢁer Saturaꢀon Voltage
Base‐Emiꢁer Saturaꢀon Voltage
Base‐Emiꢁer Saturaꢀon Voltage
1.0
0.45
1.2
V
V
V
V
V
IC = 500 mA, IB= 50 mA(2)
IC = 150 mA, IB= 15 mA, TA = 150° C(2)
IC = 150 mA, IB= 15 mA(2)
IC = 500 mA, IB= 50 mA(2)
0.6
2.0
1.4
IC = 150 mA, IB= 15 mA, TA = 55° C(2)
SMALL‐SIGNAL CHARACTERISTICS
Magnitude of Small‐Signal Short‐Circuit
Forward Current Transfer Raꢀo
| hfe|
hfe
2.5
50
8.0
‐
‐
VCE = 10 V, IC = 20 mA, f = 100 MHz
VCE = 10 V, IC = 1 mA, f = 1 kHz
Small Signal Short Circuit Forward Current
Transfer Raꢀo
Cobo
Cibo
Open Circuit Output Capacitance
Input Capacitance (Output Open)
8
pF
pF
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHZ
VEB = 0.5 V, IC =0, 100 kHz ≤ f ≤ 1 MHZ
33
SWITCHING CHARACTERISTICS
ton
toff
Turn‐On Time
Turn‐Off Time
35
ns
ns
VCC = 30 V, IC = 150 mA, IB = 15 mA
300
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
TRANSISTOR TO TRANSISTOR ISOLATION
Rt‐t Isolaꢀon Resistance
10k
MΩ
Vt‐t = 500 V
Note:
1. Derate linearly 8.57 mW/°C above TA = 25°C
2. Pulse Width = 300 µs ±50, 1‐2% Duty Cycle
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue B 08/2016 Page 3
© TT electronics plc
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