OP516C [TTELEC]
NPN Silicon Phototransistors;
| 型号： | OP516C |
| 厂家： | 
TT Electronics |
| 描述： | NPN Silicon Phototransistors 光电 |
| 文件： | 总2页 (文件大小：546K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Phototransistors
OP516A, OP516B, OP516C, OP516D
Features:
xꢀ Variety of sensitivity ranges
xꢀ Coaxial leaded package style
xꢀ Small package size for space limited applications
Description:
The OP516 series devices consist of NPN silicon phototransistors in a small hermetic package with an
extended Collector lead. The narrow receiving angle provides excellent on-axis coupling. This device is
100% production tested using infrared light for close correlation with Optek’s GaAs and GaAIAs emitters.
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Continuous Collector Current
50 mA
Collector-Emitter Voltage
30 V
5.0 V
Emitter-Collector Voltage (OP505 and OP506 series only)
Storage & Operating Temperature Range
Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 sec. with soldering iron)
Power Dissipation
-55°C to +125°C
260°C(1)
100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Maximum 20 grams force may
be applied to the leads when soldering.
(2) Derate linearly 0.71 mW/° C above 25° C.
Dimensions are in inches (mm)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue A.1 11/08
Page 1 of 2
NPN Silicon Phototransistors
OP516A, OP516B, OP516C, OP516D
Symbol
Parameter
Min Typ Max Units
Test Conditions
On-State
Collector
Current
OP516D
OP516C
OP516B
OP516A
0.40
1.00
3.00
6.00
VCE = 5 V, Ee = 5.0 mW/cm2(3)
IC(ON)
mA
VCE = 10 V, Ee = 0(4)
IC = 100 A
Collector-Dark Current
ICEO
100
nA
V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
V(BR)CEO
V(BR)ECO
30
5
IE = 100 A
V
Collector-Emitter
Saturation Voltage
OP516
VCE(SAT)
0.40
V
IC = 400 A, Ee = 5.0 mW/cm2(3)
Relative IC Changes with Temperature
OP505A-D and OP506A-D series
VCE = 5 V, Ee = 1.0 mW/cm2
¨,C/¨7
1.00
%/°C
A
IECO
Emitter-Reverse Current
100
VEC = 0.4 V
Notes:
(1)
E
e(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and
perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466” (11.84mm). Ee(APT) is not nec-
essarily uniform within the measured area.
(2) Derating Linearly 0.71 mW/°C above 25°C
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies
less than 10% over the entire lens surface of the phototransistor being tested.
(4) To calculate typical collector dark current in nA, use the formula ICED = 10(0.040T -3.4) where TA is ambient temperature in °C.
A
On-State Collector Current Vs Irradiance
Collector Current Vs Collector to Emitter Voltage vs Irradiance
3.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TA = 25°C
TA = 25°C
λ = 940 nm
VCE = 5 Volts
λ = 940 nm
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6 mW/cm2
y = 0.6364x - 0.1221
R2 = 0.9992
5 mW/cm2
4 mW/cm2
3 mW/cm2
2 mW/cm2
1 mW/cm2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
1.0
2.0
3.0
4.0
5.0
Ee -Irradiance -mW/cm2
VCE - Collector to Emitter Voltage (V)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue A.1 11/08
Page 2 of 2
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