OPB100-SZ [TTELEC]
Optical Emitter and Sensor Pair;
| 型号： | OPB100-SZ |
| 厂家： | 
TT Electronics |
| 描述： | Optical Emitter and Sensor Pair 光纤 |
| 文件： | 总3页 (文件大小：844K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared LED emiꢁer
Silicon phototransistor sensor
Snap-in mounꢀng
Variable sensing distance over 36” (91.4 cm)
Low profile package
24” (61.0 cm) wire leads
The OPB100Z series consists of an infrared LED (OPB100-EZ) and phototransistor (OPB100-SZ) in separate plasꢀc housings.
The low cost, snap-in design requires no screws or other mounꢀng hardware for ease of installaꢀon.
The emiꢁer and sensor are not apertured, which allows separaꢀon distances in excess of 36” (91.4 cm) without concern for
precise alignment. The front side clip allows mounꢀng of the product to any 0.059” (1.50 mm) thick material.
This product is designed for general switching and low-speed data communicaꢀons applicaꢀons.
Ordering Informaꢁon
Part
Number
LED Peak
Wavelength
Lead Length /
Spacing
Non-contact reflecꢀve object
Non-contact interrupꢀve sensing
Assembly line automaꢀon
Machine automaꢀon
Sensor
OPB100-EZ
OPB100-SZ
OPB100Z
880 nm
24" / 26 AWG
Wire
Machine safety
Transistor
Emiꢀer (LED)
Contains both OPB100-EZ & OPB100-SZ
Phototransistor
Red
White
Hole Pattern
Hole Pattern
Green
Black
Ø0.190 [Ø4.83]
26 AWG
UL Rated
Symbolize Cover
Hole Pattern
0.335 [8.51]
Ø0.150 [Ø3.81]
Absolute Maximum Raꢁngs (TA = 25° C unless otherwise noted)
Storage Temperature Range
Operaꢀng Temperature Range(1)
Input LED (OP298 for addiꢁonal informaꢁon)
Forward DC Current
-40o C to +85o C
-40o C to +80o C
100 mA
1 A
Peak Forward Current (1 μs pulse width, 300 pps)
Reverse DC Voltage
2 V
Power Dissipaꢀon(2)
142 mW
Output Phototransistor (OP598 for addiꢁonal informaꢁon)
Collector-Emiꢁer Voltage
30 V
5 V
Emiꢁer-Collector Voltage
Collector DC Current
Power Dissipaꢀon(3)
50 mA
250 mW
Electrical Characterisꢁcs (TA = 25° C unless otherwise noted)
Input Diode (See OP298 for addiꢀonal informaꢀon — for reference only)
VF
IR
Forward Voltage
-
-
-
-
-
1.7
15
-
V
IF = 20 mA
VR= 10 V
Reverse Current
μA
qHP
Emission Angle at Half Power Points
25
Degree IF = 20 mA
IF = 100 mA
mW/
EE (APT) Apertured Radiant Intensity
6.5
-
-
Distance = 1.43” (3.63 cm)
cm2
Aperture = 0.25” (6.35 mm)
Output Phototransistor (See OP598 for addiꢀonal informaꢀon — for reference only)
V(BR)CEO Collector-Emiꢁer Breakdown Voltage
V(BR)ECO Emiꢁer-Collector Breakdown Voltage
30
5
-
-
-
-
V
V
IC = 1 mA, EE = 0mw/cm2 (no light)
IC = 100 μA, EE = 0mw/cm2 (no light)
VCE = 10V, IF = 0, EE = 0 mw/cm2
(no light)
ICEO
Collector Dark Current
-
-
100
nA
VCE(SAT) Collector-Emiꢁer Saturaꢀon Voltage
IC(ON) On-State Collector Current
Notes:
-
-
-
0.4
V
IC = 400 μA, EE = 1.7 mw/cm2
VCE = 5 V, EE = 1.7 mw/cm2
5
-
mA
1. Derate linearly 3.33 mW/°C above 25°C.
2. All parameters measured using pulse technique.
3. Derate linearly 1.43 mW/°C above 25°C.
Output Current vs. Distance
100
10
IF=20 mA
IF=50 mA
1
0.1
0.01
1
2
3
4
5
6
7
8
9
10
11
12
Distance (inches)
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