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2SA1812 [TYSEMI]

High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V; 高击穿电压。低饱和度voltage.Collector - 基极电压VCBO -400 V
2SA1812
元器件型号： 2SA1812
生产厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述和应用：

High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V
高击穿电压。低饱和度voltage.Collector - 基极电压VCBO -400 V
PDF文件： 总2页 (文件大小：179K)
下载文档：  下载PDF数据表文档文件
型号参数：2SA1812参数
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2SA1812_1

 High-voltage Switching Transistor ( 400V, 0.5A)

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6 ROHM

2SA1812N

 TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89

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46 ETC

2SA1812P

 TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89

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13 ETC

2SA1812Q

 TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89

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19 ETC

2SA1812T100/N

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/N

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NP

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NP

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NQ

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NQ

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/PQ

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/PQ

 Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100N

 500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR

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0 ROHM

2SA1812T100P

 500mA, 400V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPT3, 3 PIN

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0 ROHM

2SA1812T100Q

 Si, SMALL SIGNAL TRANSISTOR

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1 ROHM
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