2SB1275 [TYSEMI]

High breakdown voltage.(BVCEO = -160V) Low collector output capacitance.; 高击穿电压( BVCEO = -160V )低集电极输出电容。
2SB1275
型号: 2SB1275
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

High breakdown voltage.(BVCEO = -160V) Low collector output capacitance.
高击穿电压( BVCEO = -160V )低集电极输出电容。

文件: 总1页 (文件大小:62K)
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2SB1275/N

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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0 ROHM

2SB1275/NQ

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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2 ROHM

2SB1275/NQ

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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0 ROHM

2SB1275/Q

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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0 ROHM

2SB1275/Q

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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0 ROHM

2SB1275_09

Power Transistor (-160V, -1.5A)

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37 ROHM

2SB1275_13

PNP -1.5A -160V Middle Power Transistor

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30 ROHM

2SB1275_15

PNP Transistors

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0 KEXIN

2SB1275F5

TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-252

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83 ETC

2SB1275F5/NP

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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0 ROHM

2SB1275F5/NP

Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon,

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0 ROHM

2SB1275F5N

TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-252

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14 ETC

2SB1275F5P

TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-252

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9 ETC

2SB1275F5Q

TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-252

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12 ETC

2SB1275N

TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251VAR

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9 ETC